Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
RM

Roderick C. Mosely — 51 Patents

Applied Materials: 41 patents #223 of 7,310Top 4%
JTJennings Technology: 3 patents #2 of 11Top 20%
TIThomas & Betts International: 3 patents #150 of 424Top 40%
VLVaccine Technology Limited: 2 patents #5 of 26Top 20%
JEJapan Energy: 1 patents #85 of 240Top 40%
Pleasanton, CA: #88 of 3,062 inventorsTop 3%
California: #7,783 of 386,348 inventorsTop 3%
Overall (All Time): #51,932 of 4,157,543Top 2%
51 Patents All Time
Roderick C. Mosely has been granted 51 US patents while listed as an inventor at Applied Materials. The first was granted in 1988 and the most recent in August 2018. Roderick C. Mosely ranks #51,932 of 4,157,543 US inventors in our database (top 1.2%). Patent records list Roderick C. Mosely in Pleasanton, CA, US.

Patents per Year

Patents granted per year, 1988 to 2018Bar chart with a peak of 9 patents in 2000.peak 91988: 2 patents19881992: 1 patents1995: 1 patents19951998: 1 patents1999: 5 patents19992000: 9 patents2001: 4 patents20012002: 7 patents2003: 3 patents20032004: 3 patents2005: 2 patents20052006: 2 patents2007: 1 patents20072008: 2 patents2009: 3 patents20092010: 1 patents2012: 1 patents20122014: 2 patents2018: 1 patents2018

Issued Patents All Time

Showing 1–25 of 51 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
10047430 Self-ionized and inductively-coupled plasma for sputtering and resputtering Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan +7 more 2018-08-14 $24,993,000
8696875 Self-ionized and inductively-coupled plasma for sputtering and resputtering Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan +7 more 2014-04-15 $21,336,000
8668816 Self-ionized and inductively-coupled plasma for sputtering and resputtering Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan +7 more 2014-03-11 $12,153,000
8324095 Integration of ALD tantalum nitride for copper metallization Hua Chung, Nirmalya Maity, Jick Yu, Mei Chang 2012-12-04 $6,403,000
7802480 Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device Steven Jay Randazzo 2010-09-28 $5,051,000
7604708 Cleaning of native oxide with hydrogen-containing radicals Bingxi Wood, Mark Kawaguchi, James S. Papanu, Chiukun Steven Lai, Chien-Teh Kao +2 more 2009-10-20 $54,871,000
7499255 Vacuum-type electrical switching apparatus James Francis Domo, Lance Sabados, Steven Jay Randazzo, Joseph E. Oeschger, Mary Montesclaros 2009-03-03 $5,565,000
7497122 Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device Mary Montesclaros, Steven Jay Randazzo, Bryce Sollazzi, Robert James Speciale 2009-03-03 $5,565,000
7383733 Method and apparatus for the sonic detection of high pressure conditions in a vacuum switching device Steven Jay Randazzo, Li Lei, Ernest F. Bestel 2008-06-10
7313964 Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device Mary Montesclaros, Steven Jay Randazzo, Bryce Sollazzi, Robert James Speciale 2008-01-01
7302854 Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device John C. Egermeier, Steven Jay Randazzo, Bryce Sollazzi 2007-12-04
7048837 End point detection for sputtering and resputtering Sasson Somekh, Marc Schweitzer, John C. Forster, Zheng Xu, Barry Chin +1 more 2006-05-23 $10,996,000
7049226 Integration of ALD tantalum nitride for copper metallization Hua Chung, Nirmalya Maity, Jick Yu, Mei Chang 2006-05-23 $10,996,000
6933021 Method of TiSiN deposition using a chemical vapor deposition (CVD) process Jing-Pei (Connie) Chou, Chien-Teh Kao, Chiukin Lai, Mei Chang 2005-08-23 $18,503,000
6905965 Reactive preclean prior to metallization for sub-quarter micron application Suchitra Subrahmanyan, Liang-Yuh Chen 2005-06-14 $12,100,000
6743714 Low temperature integrated metallization process and apparatus Hong Mei Zhang, Fusen Chen, Ted Guo, Liang-Yuh Chen 2004-06-01 $29,854,000
6726776 Low temperature integrated metallization process and apparatus Hong Mei Zhang, Fusen Chen, Ted Guo 2004-04-27 $41,702,000
6693030 Reactive preclean prior to metallization for sub-quarter micron application Suchitra Subrahmanyan, Liang-Yuh Chen 2004-02-17 $39,298,000
6607976 Copper interconnect barrier layer structure and formation method Ling Chen, Seshadri Ganguli, Christophe Marcadal, Wei Cao, Mei Chang 2003-08-19 $39,032,000
6518176 Method of selective formation of a barrier layer for a contact level via Ted Guo, Liang-Yuh Chen, Suchitra Subrahmanyan 2003-02-11
6509274 Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate Ted Guo, Jing-Pei (Connie) Chou, Liang-Yuh Chen 2003-01-21 $45,007,000
6500742 Construction of a film on a semiconductor wafer Chyi Chern, Michal Danek, Marvin Liao, Karl A. Littau, Ivo Raaijmakers +1 more 2002-12-31 $23,154,000
6458684 Single step process for blanket-selective CVD aluminum deposition Ted Guo, Liang-Yuh Chen, Mehul Naik 2002-10-01 $35,783,000
6444036 Construction of a film on a semiconductor wafer Chyi Chern, Michal Danek, Marvin Liao, Karl A. Littau, Ivo Raaijmakers +1 more 2002-09-03 $21,151,000
6436819 Nitrogen treatment of a metal nitride/metal stack Zhi ZHANG, David Pung, Nitin Khurana, Hong Mei Zhang 2002-08-20 $16,370,000