| 12238946 |
Perovskite/silicon heterojunction tandem solar cell and preparation method thereof |
Enbing BI, Qiankai BA |
2025-02-25 |
|
| 9593417 |
Gas line weldment design and process for CVD aluminum |
Wei Ti Lee, Steve H. Chiao, Alan A. Ritchie |
2017-03-14 |
$16,778,000 |
| 8968536 |
Sputtering target having increased life and sputtering uniformity |
Adolph Miller Allen, Ki Hwan Yoon, Hong Yang, Sang Ho Yu |
2015-03-03 |
$11,301,000 |
| 8535443 |
Gas line weldment design and process for CVD aluminum |
Wei Ti Lee, Steve H. Chiao, Alan A. Ritchie |
2013-09-17 |
$7,314,000 |
| 7867900 |
Aluminum contact integration on cobalt silicide junction |
Wei Ti Lee, Mohd Fadzli Anwar Hassan, Sang Ho Yu |
2011-01-11 |
$9,486,000 |
| 7857947 |
Unique passivation technique for a CVD blocker plate to prevent particle formation |
Alan A. Ritchie, Wei Ti Lee |
2010-12-28 |
$12,129,000 |
| 7824743 |
Deposition processes for titanium nitride barrier and aluminum |
Wei Ti Lee, Yen-Chih Wang, Mohd Fadzli Anwar Hassan, Ryeun Kwan Kim, Hyung Chul Park +1 more |
2010-11-02 |
$16,115,000 |
| 7378002 |
Aluminum sputtering while biasing wafer |
Wei Ti Lee, Sang Ho Yu |
2008-05-27 |
$25,876,000 |
| 7186319 |
Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
Hong Yang, Tza-Jing Gung, Jian Lei |
2007-03-06 |
$17,668,000 |
| 7112528 |
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug |
Liang-Yuh Chen, Roderick Craig Mosley, Fusen Chen |
2006-09-26 |
$15,511,000 |
| 6743714 |
Low temperature integrated metallization process and apparatus |
Roderick C. Mosely, Hong Mei Zhang, Fusen Chen, Liang-Yuh Chen |
2004-06-01 |
$29,854,000 |
| 6726776 |
Low temperature integrated metallization process and apparatus |
Roderick C. Mosely, Hong Mei Zhang, Fusen Chen |
2004-04-27 |
$41,702,000 |
| 6716733 |
CVD-PVD deposition process |
Wei Ti Lee |
2004-04-06 |
$31,300,000 |
| 6656831 |
Plasma-enhanced chemical vapor deposition of a metal nitride layer |
Wei Ti Lee |
2003-12-02 |
$32,739,000 |
| 6605531 |
Hole-filling technique using CVD aluminum and PVD aluminum integration |
Wei Shi, Liang-Yuh Chen |
2003-08-12 |
$51,867,000 |
| 6537905 |
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug |
Liang-Yuh Chen, Roderick Craig Mosley, Fusen Chen |
2003-03-25 |
$28,989,000 |
| 6528180 |
Liner materials |
Wei Ti Lee, Gongda Yao |
2003-03-04 |
$29,443,000 |
| 6518176 |
Method of selective formation of a barrier layer for a contact level via |
Liang-Yuh Chen, Suchitra Subrahmanyan, Roderick C. Mosely |
2003-02-11 |
|
| 6509274 |
Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate |
Jing-Pei (Connie) Chou, Liang-Yuh Chen, Roderick C. Mosely |
2003-01-21 |
$45,007,000 |
| 6458684 |
Single step process for blanket-selective CVD aluminum deposition |
Liang-Yuh Chen, Mehul Naik, Roderick C. Mosely |
2002-10-01 |
$35,783,000 |
| 6430458 |
Semi-selective chemical vapor deposition |
Roderick C. Mosely, Liang-Yuh Chen |
2002-08-06 |
$31,580,000 |
| 6355560 |
Low temperature integrated metallization process and apparatus |
Roderick C. Mosely, Hong Mei Zhang, Fusen Chen |
2002-03-12 |
$78,135,000 |
| 6207222 |
Dual damascene metallization |
Liang-Yuh Chen, Rong Tao, Roderick C. Mosely |
2001-03-27 |
$69,548,000 |
| 6169030 |
Metallization process and method |
Mehul Naik, Liang-Yuh Chen, Roderick C. Mosely, Israel Beinglass |
2001-01-02 |
$117,838,000 |
| 6139905 |
Integrated CVD/PVD Al planarization using ultra-thin nucleation layers |
Liang-Yuh Chen, Mehul Naik, Roderick C. Mosely |
2000-10-31 |
$72,215,000 |
