Issued Patents All Time
Showing 25 most recent of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12238946 | Perovskite/silicon heterojunction tandem solar cell and preparation method thereof | Enbing BI, Qiankai BA | 2025-02-25 |
| 9593417 | Gas line weldment design and process for CVD aluminum | Wei Ti Lee, Steve H. Chiao, Alan A. Ritchie | 2017-03-14 |
| 8968536 | Sputtering target having increased life and sputtering uniformity | Adolph Miller Allen, Ki Hwan Yoon, Hong Yang, Sang Ho Yu | 2015-03-03 |
| 8535443 | Gas line weldment design and process for CVD aluminum | Wei Ti Lee, Steve H. Chiao, Alan A. Ritchie | 2013-09-17 |
| 7867900 | Aluminum contact integration on cobalt silicide junction | Wei Ti Lee, Mohd Fadzli Anwar Hassan, Sang Ho Yu | 2011-01-11 |
| 7857947 | Unique passivation technique for a CVD blocker plate to prevent particle formation | Alan A. Ritchie, Wei Ti Lee | 2010-12-28 |
| 7824743 | Deposition processes for titanium nitride barrier and aluminum | Wei Ti Lee, Yen-Chih Wang, Mohd Fadzli Anwar Hassan, Ryeun Kwan Kim, Hyung Chul Park +1 more | 2010-11-02 |
| 7378002 | Aluminum sputtering while biasing wafer | Wei Ti Lee, Sang Ho Yu | 2008-05-27 |
| 7186319 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry | Hong Yang, Tza-Jing Gung, Jian Lei | 2007-03-06 |
| 7112528 | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug | Liang-Yuh Chen, Roderick Craig Mosley, Fusen Chen | 2006-09-26 |
| 6743714 | Low temperature integrated metallization process and apparatus | Roderick C. Mosely, Hong Mei Zhang, Fusen Chen, Liang-Yuh Chen | 2004-06-01 |
| 6726776 | Low temperature integrated metallization process and apparatus | Roderick C. Mosely, Hong Mei Zhang, Fusen Chen | 2004-04-27 |
| 6716733 | CVD-PVD deposition process | Wei Ti Lee | 2004-04-06 |
| 6656831 | Plasma-enhanced chemical vapor deposition of a metal nitride layer | Wei Ti Lee | 2003-12-02 |
| 6605531 | Hole-filling technique using CVD aluminum and PVD aluminum integration | Wei Shi, Liang-Yuh Chen | 2003-08-12 |
| 6537905 | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug | Liang-Yuh Chen, Roderick Craig Mosley, Fusen Chen | 2003-03-25 |
| 6528180 | Liner materials | Wei Ti Lee, Gongda Yao | 2003-03-04 |
| 6518176 | Method of selective formation of a barrier layer for a contact level via | Liang-Yuh Chen, Suchitra Subrahmanyan, Roderick C. Mosely | 2003-02-11 |
| 6509274 | Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate | Jing-Pei (Connie) Chou, Liang-Yuh Chen, Roderick C. Mosely | 2003-01-21 |
| 6458684 | Single step process for blanket-selective CVD aluminum deposition | Liang-Yuh Chen, Mehul Naik, Roderick C. Mosely | 2002-10-01 |
| 6430458 | Semi-selective chemical vapor deposition | Roderick C. Mosely, Liang-Yuh Chen | 2002-08-06 |
| 6355560 | Low temperature integrated metallization process and apparatus | Roderick C. Mosely, Hong Mei Zhang, Fusen Chen | 2002-03-12 |
| 6207222 | Dual damascene metallization | Liang-Yuh Chen, Rong Tao, Roderick C. Mosely | 2001-03-27 |
| 6169030 | Metallization process and method | Mehul Naik, Liang-Yuh Chen, Roderick C. Mosely, Israel Beinglass | 2001-01-02 |
| 6139697 | Low temperature integrated via and trench fill process and apparatus | Liang-Yuh Chen, Roderick C. Mosely, Fusen Chen, Rong Tao | 2000-10-31 |