Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6139905 | Integrated CVD/PVD Al planarization using ultra-thin nucleation layers | Liang-Yuh Chen, Mehul Naik, Roderick C. Mosely | 2000-10-31 |
| 6120844 | Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer | Liang-Yuh Chen, Fusen Chen, Roderick C. Mosely | 2000-09-19 |
| 6110828 | In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization | Liang-Yuh Chen, Suchitra Subrahmanyan | 2000-08-29 |
| 6079354 | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers | Barney M. Cohen, Amrita Verma | 2000-06-27 |
| 6080665 | Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum | Liang-Yuh Chen, Roderick C. Mosely | 2000-06-27 |
| 6077781 | Single step process for blanket-selective CVD aluminum deposition | Liang-Yuh Chen, Mehul Naik, Roderick C. Mosely | 2000-06-20 |
| 6066358 | Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer | Liang-Yuh Chen, Fusen Chen, Roderick C. Mosely | 2000-05-23 |
| 6017144 | Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer | Mehul Naik, Liang Chen, Roderick C. Mosely, Israel Beinglass | 2000-01-25 |
| 6001420 | Semi-selective chemical vapor deposition | Roderick C. Mosely, Liang-Yuh Chen | 1999-12-14 |
| 5989623 | Dual damascene metallization | Liang-Yuh Chen, Rong Tao, Roderick C. Mosely | 1999-11-23 |
| 5956608 | Modulating surface morphology of barrier layers | Nitin Khurana | 1999-09-21 |
| 5877087 | Low temperature integrated metallization process and apparatus | Roderick C. Mosely, Hong Mei Zhang, Fusen Chen | 1999-03-02 |
| 5763010 | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers | Barney M. Cohen, Amrita Verma | 1998-06-09 |