Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Copper interconnect barrier layer structure and formation method

Copper interconnect barrier layer structure and formation method

US Patent 6607976 · Granted Aug 19, 2003

Estimated economic value: $39,032,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Conformal molybdenum deposition2025
Methods and apparatus for seam reduction or elimination2025
Methods and materials for enhanced barrier performance and reduced via resistanc2025
Gap fill methods using catalyzed deposition2025
Plasma preclean system for cluster tool2025
Deposition of silicon-based dielectric films2025
Display panel, method for manufacturing same, and display device2025
Display panel and preparation method thereof, and display device2025
Composite polyester hot-melt adhesive and preparation method thereof and prepara2024
Integrated dipole region for transistor2024
Enhancing gapfill performance of dram word line2024
Amorphous silicon-based scavenging and sealing EOT2024