| 9217197 |
Methods for depositing a layer on a substrate using surface energy modulation |
— |
2015-12-22 |
$10,069,000 |
| 8993434 |
Methods for forming layers on a substrate |
Rong Tao, Xinyu Fu |
2015-03-31 |
$7,138,000 |
| 8852674 |
Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers |
Xinyu Fu |
2014-10-07 |
$14,828,000 |
| 8764961 |
Cu surface plasma treatment to improve gapfill window |
Qian Luo, Arvind Sundarrajan, Hua Chung, Xianmin Tang, Murali Narasimhan |
2014-07-01 |
$14,182,000 |
| 8580354 |
Plasma treatment of substrates prior to deposition |
Xinyu Fu |
2013-11-12 |
$7,355,000 |
| 8557094 |
Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum |
Xianmin Tang, Hua Chung, Rongjun Wang, Tza-Jing Gung, Praburam Gopalraja +1 more |
2013-10-15 |
$14,573,000 |
| 8349724 |
Method for improving electromigration lifetime of copper interconnection by extended post anneal |
Xinyu Fu |
2013-01-08 |
$7,807,000 |
| 8324095 |
Integration of ALD tantalum nitride for copper metallization |
Hua Chung, Nirmalya Maity, Roderick C. Mosely, Mei Chang |
2012-12-04 |
$6,403,000 |
| 8119525 |
Process for selective growth of films during ECP plating |
Wei Wang, Rongjun Wang, Hua Chung |
2012-02-21 |
$13,903,000 |
| 8021514 |
Remote plasma source for pre-treatment of substrates prior to deposition |
Xinyu Fu |
2011-09-20 |
$5,642,000 |
| 7737028 |
Selective ruthenium deposition on copper materials |
Rongjun Wang, Hua Chung, Praburam Gopalraja |
2010-06-15 |
$8,018,000 |
| 7704887 |
Remote plasma pre-clean with low hydrogen pressure |
Xinyu Fu, John C. Forster, Ajay Bhatnagar, Praburam Gopalraja |
2010-04-27 |
$16,065,000 |
| 7659204 |
Oxidized barrier layer |
Xianmin Tang, Hua Chung, Rongjun Wang, Praburam Gopalraja, Jenn-Yue Wang |
2010-02-09 |
$11,111,000 |
| 7494908 |
Apparatus for integration of barrier layer and seed layer |
Hua Chung, Ling Chen, Mei Chang |
2009-02-24 |
$21,837,000 |
| 7352048 |
Integration of barrier layer and seed layer |
Hua Chung, Ling Chen, Mei Chang |
2008-04-01 |
$94,557,000 |
| 7294574 |
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement |
Peijun Ding, Fuhong Zhang, Hsien-Lung Yang, Michael Miller, Jianming Fu +2 more |
2007-11-13 |
$11,470,000 |
| 7265048 |
Reduction of copper dewetting by transition metal deposition |
Hua Chung, Seshadri Ganguli, Christophe Marcadal |
2007-09-04 |
$16,959,000 |
| 7049226 |
Integration of ALD tantalum nitride for copper metallization |
Hua Chung, Nirmalya Maity, Roderick C. Mosely, Mei Chang |
2006-05-23 |
$10,996,000 |
| 6936906 |
Integration of barrier layer and seed layer |
Hua Chung, Ling Chen, Mei Chang |
2005-08-30 |
$15,796,000 |
| 6899796 |
Partially filling copper seed layer |
Wei Wang, Anantha K. Subramani, Jianming Fu, Praburam Gopalraja, Fusen Chen |
2005-05-31 |
$12,544,000 |
| 6887786 |
Method and apparatus for forming a barrier layer on a substrate |
Hong Mei Zhang, Xianmin Tang, Praburam Gopalraja, John C. Forster |
2005-05-03 |
$16,365,000 |
| 6884329 |
Diffusion enhanced ion plating for copper fill |
Wei Wang, Anantha K. Subramani, Jianming Fu, Praburam Gopalraja, Fusen Chen |
2005-04-26 |
$27,390,000 |
| 6746727 |
Metal to ILD adhesion improvement by reactive sputtering |
Chi-Hing Choi |
2004-06-08 |
$20,315,000 |
| 6730598 |
Integration of annealing capability into metal deposition or CMP tool |
— |
2004-05-04 |
$23,705,000 |
| 6365514 |
Two chamber metal reflow process |
Ruth A. Brain |
2002-04-02 |
$46,572,000 |
