Issued Patents All Time
Showing 151–175 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8835260 | Control of threshold voltages in high-k metal gate stack and structures for CMOS devices | Hemanth Jagannathan, Takashi Ando | 2014-09-16 |
| 8796784 | Devices and methods to optimize materials and properties for replacement metal gate structures | Takashi Ando, Christian Lavoie | 2014-08-05 |
| 8785322 | Devices and methods to optimize materials and properties for replacement metal gate structures | Takashi Ando, Christian Lavoie | 2014-07-22 |
| 8785995 | Ferroelectric semiconductor transistor devices having gate modulated conductive layer | Catherine A. Dubourdieu, David J. Frank, Martin M. Frank, Paul M. Solomon, Thomas Theis | 2014-07-22 |
| 8786030 | Gate-last fabrication of quarter-gap MGHK FET | Takashi Ando, Kisik Choi, Tenko Yamashita, Junli Wang | 2014-07-22 |
| 8753936 | Changing effective work function using ion implantation during dual work function metal gate integration | Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha +3 more | 2014-06-17 |
| 8754403 | Epitaxial source/drain contacts self-aligned to gates for deposited FET channels | Josephine B. Chang, Paul Chang, Jeffrey W. Sleight | 2014-06-17 |
| 8748991 | Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices | Hemanth Jagannathan, Takashi Ando | 2014-06-10 |
| 8741713 | Reliable physical unclonable function for device authentication | John Bruley, Dirk Pfeiffer, Jean-Oliver Plouchart, Peilin Song | 2014-06-03 |
| 8735243 | FET device with stabilized threshold modifying material | Matthew W. Copel, Bruce B. Doris, Yun-Yu Wang | 2014-05-27 |
| 8735996 | Scavenging metal stack for a high-K gate dielectric | Takashi Ando, Unoh Kwon, James K. Schaeffer | 2014-05-27 |
| 8732014 | Automatic classification of display ads using ad images and landing pages | Andrew Edward Kae, Kin Fai Kan | 2014-05-20 |
| 8722548 | Structures and techniques for atomic layer deposition | Shintaro Aoyama, Robert D. Clark, Steven P. Consiglio, Marinus Hopstaken, Hemanth Jagannathan +4 more | 2014-05-13 |
| 8716088 | Scavenging metal stack for a high-K gate dielectric | Takashi Ando, Unoh Kwon, James K. Schaeffer | 2014-05-06 |
| 8716118 | Replacement gate structure for transistor with a high-K gate stack | Takashi Ando, Eduard A. Cartier, Unoh Kwon | 2014-05-06 |
| 8716813 | Scaled equivalent oxide thickness for field effect transistor devices | Takashi Ando, Changhwan Choi, Unoh Kwon | 2014-05-06 |
| 8680629 | Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices | Hemanth Jagannathan, Takashi Ando | 2014-03-25 |
| 8680623 | Techniques for enabling multiple Vt devices using high-K metal gate stacks | Martin M. Frank, Arvind Kumar, Vamsi K. Paruchuri, Jeffrey W. Sleight | 2014-03-25 |
| 8658501 | Method and apparatus for flatband voltage tuning of high-k field effect transistors | Supratik Guha, Vamsi K. Paruchuri | 2014-02-25 |
| 8592296 | Gate-last fabrication of quarter-gap MGHK FET | Takashi Ando, Kisik Choi, Tenko Yamashita, Junli Wang | 2013-11-26 |
| 8569844 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Barry P. Linder, Vamsi K. Paruchuri | 2013-10-29 |
| 8564074 | Self-limiting oxygen seal for high-K dielectric and design structure | Terence B. Hook, Jay M. Shah, Melanie J. Sherony, Kenneth J. Stein, Helen Wang +1 more | 2013-10-22 |
| 8518766 | Method of forming switching device having a molybdenum oxynitride metal gate | Nestor A. Bojarczuk, Michael P. Chudzik, Matthew W. Copel, Supratik Guha, Richard A. Haight +2 more | 2013-08-27 |
| 8513099 | Epitaxial source/drain contacts self-aligned to gates for deposited FET channels | Josephine B. Chang, Paul Chang, Jeffrey W. Sleight | 2013-08-20 |
| 8507992 | High-K metal gate CMOS | Renee T. Mo, Huiming Bu, Michael P. Chudzik, William K. Henson, Mukesh V. Khare | 2013-08-13 |