Issued Patents All Time
Showing 176–200 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8420473 | Replacement gate devices with barrier metal for simultaneous processing | Takashi Ando, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon | 2013-04-16 |
| 8415677 | Field-effect transistor device having a metal gate stack with an oxygen barrier layer | Praneet Adusumilli, Alessandro C. Callegari, Josephine B. Chang, Changhwan Choi, Martin M. Frank +1 more | 2013-04-09 |
| 8404530 | Replacement metal gate with a conductive metal oxynitride layer | Takashi Ando | 2013-03-26 |
| 8383483 | High performance CMOS circuits, and methods for fabricating same | John C. Arnold, Glenn A. Biery, Alessandro C. Callegari, Tze-Chiang Chen, Michael P. Chudzik +7 more | 2013-02-26 |
| 8367496 | Scavanging metal stack for a high-k gate dielectric | Takashi Ando, Changhwan Choi, Martin M. Frank | 2013-02-05 |
| 8343839 | Scaled equivalent oxide thickness for field effect transistor devices | Takashi Ando, Changhwan Choi, Unoh Kwon | 2013-01-01 |
| 8304836 | Structure and method to obtain EOT scaled dielectric stacks | Hemanth Jagannathan, Takashi Ando, Lisa F. Edge, Sufi Zafar, Changhwan Choi +2 more | 2012-11-06 |
| 8274116 | Control of threshold voltages in high-k metal gate stack and structures for CMOS devices | Hemanth Jagannathan, Takashi Ando | 2012-09-25 |
| 8212322 | Techniques for enabling multiple Vt devices using high-K metal gate stacks | Martin M. Frank, Arvind Kumar, Vamsi K. Paruchuri, Jeffrey W. Sleight | 2012-07-03 |
| 8193051 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2012-06-05 |
| 8187961 | Threshold adjustment for high-K gate dielectric CMOS | Bruce B. Doris, Eduard A. Cartier, Vamsi K. Paruchuri | 2012-05-29 |
| 8183642 | Gate effective-workfunction modification for CMOS | Dae-Gyu Park, Michael P. Chudzik, Rashmi Jha, Siddarth A. Krishnan, Naim Moumen +1 more | 2012-05-22 |
| 8153514 | Method of forming metal/high-κ gate stacks with high mobility | Wanda Andreoni, Alessandro C. Callegari, Eduard A. Cartier, Alessandro Curioni, Christopher P. D'Emic +9 more | 2012-04-10 |
| 8110467 | Multiple Vt field-effect transistor devices | Josephine B. Chang, Leland Chang, Renee T. Mo, Jeffrey W. Sleight | 2012-02-07 |
| 8097500 | Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device | Takashi Ando, Eduard A. Cartier, Changhwan Choi, Elizabeth A. Duch, Bruce B. Doris +3 more | 2012-01-17 |
| 8065619 | Customized today module | Deepak Agarwal, Bee-Chung Chen, Pradheep Elango, Nitin Motgi, Raghu Ramakrishnan +9 more | 2011-11-22 |
| 8035173 | CMOS transistors with differential oxygen content high-K dielectrics | Huiming Bu, Eduard A. Cartier, Bruce B. Doris, Young-Hee Kim, Barry P. Linder +2 more | 2011-10-11 |
| 8030716 | Self-aligned CMOS structure with dual workfunction | Dae-Gyu Park, Michael P. Chudzik, Vamsi K. Paruchuri | 2011-10-04 |
| 7999323 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Bruce B. Doris, Rajarao Jammy, Young-Hee Kim +3 more | 2011-08-16 |
| 7989902 | Scavenging metal stack for a high-k gate dielectric | Takashi Ando, Changhwan Choi, Martin M. Frank | 2011-08-02 |
| 7947549 | Gate effective-workfunction modification for CMOS | Dae-Gyu Park, Michael P. Chudzik, Rashmi Jha, Siddarth A. Krishnan, Naim Moumen +1 more | 2011-05-24 |
| 7943460 | High-K metal gate CMOS | Renee T. Mo, Huiming Bu, Michael P. Chudzik, William K. Henson, Mukesh V. Khare | 2011-05-17 |
| 7928514 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2011-04-19 |
| 7923743 | Semiconductor structure including mixed rare earth oxide formed on silicon | Nestor A. Bojarczuk, Douglas A. Buchanan, Supratik Guha, Lars-Ake Ragnarsson | 2011-04-12 |
| 7919379 | Dielectric spacer removal | Eduard A. Cartier, Rashmi Jha, Sivananda K. Kanakasabapathy, Xi Li, Renee T. Mo +6 more | 2011-04-05 |