Issued Patents All Time
Showing 226–250 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7666732 | Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Barry P. Linder, Vamsi K. Paruchuri | 2010-02-23 |
| 7655557 | CMOS silicide metal gate integration | Ricky S. Amos, Diane C. Boyd, Cyril Cabral, Jr., Richard D. Kaplan, Jakub Kedzierski +6 more | 2010-02-02 |
| 7655994 | Low threshold voltage semiconductor device with dual threshold voltage control means | Eduard A. Cartier, Mathew W. Copel, Martin M. Frank, Evgeni Gousev, Paul C. Jamison +2 more | 2010-02-02 |
| 7648864 | Semiconductor structure including mixed rare earth oxide formed on silicon | Nestor A. Bojarczuk, Douglas A. Buchanan, Supratik Guha, Lars-Ake Ragnarsson | 2010-01-19 |
| 7611979 | Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks | Alessandro C. Callegari, Michael P. Chudzik, Barry P. Linder, Renee T. Mo, Dae-Gyu Park +2 more | 2009-11-03 |
| 7598545 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Bruce B. Doris, Rajarao Jammy, Young-Hee Kim +3 more | 2009-10-06 |
| 7569466 | Dual metal gate self-aligned integration | Alessandro C. Callegari, Michael P. Chudzik, Bruce B. Doris, Vamsi K. Paruchuri, Michelle L. Steen | 2009-08-04 |
| 7566938 | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures | Cyril Cabral, Jr., Alessandro C. Callegari, Michael A. Gribelyuk, Paul C. Jamison, Dianne L. Lacey +4 more | 2009-07-28 |
| 7488656 | Removal of charged defects from metal oxide-gate stacks | Eduard A. Cartier, Matthew W. Copel, Supratik Guha, Richard A. Haight, Fenton R. McFeely | 2009-02-10 |
| 7479683 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2009-01-20 |
| 7452767 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2008-11-18 |
| 7446380 | Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS | Nestor A. Bojarczuk, Michael P. Chudzik, Matthew W. Copel, Supratik Guha, Rajarao Jammy +1 more | 2008-11-04 |
| 7436034 | Metal oxynitride as a pFET material | Alessandro C. Callegari, Michael A. Gribelyuk, Vamsi K. Paruchuri, Sufi Zafar | 2008-10-14 |
| 7432550 | Semiconductor structure including mixed rare earth oxide formed on silicon | Nestor A. Bojarczuk, Douglas A. Buchanan, Supratik Guha, Lars-Ake Ragnarsson | 2008-10-07 |
| 7432567 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Barry P. Linder, Vamsi K. Paruchuri | 2008-10-07 |
| 7425497 | Introduction of metal impurity to change workfunction of conductive electrodes | Michael P. Chudzik, Bruce B. Doris, Supratik Guha, Rajarao Jammy, Vamsi K. Paruchuri +2 more | 2008-09-16 |
| 7411227 | CMOS silicide metal gate integration | Ricky S. Amos, Diane C. Boyd, Cyril Cabral, Jr., Richard D. Kaplan, Jakub Kedzierski +6 more | 2008-08-12 |
| 7348226 | Method of forming lattice-matched structure on silicon and structure formed thereby | Nestor A. Bojarczuk, Matthew W. Copel, Supratik Guha | 2008-03-25 |
| 7271455 | Formation of fully silicided metal gate using dual self-aligned silicide process | Cyril Cabral, Jr., Chester T. Dziobkowski, Sunfei Fang, Evgeni Gousev, Rajarao Jammy +4 more | 2007-09-18 |
| 7242055 | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Martin M. Frank, Evgeni Gousev +4 more | 2007-07-10 |
| 7115959 | Method of forming metal/high-k gate stacks with high mobility | Wanda Andreoni, Alessandro C. Callegari, Eduard A. Cartier, Alessandro Curioni, Christopher P. D'Emic +9 more | 2006-10-03 |
| 7105889 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2006-09-12 |
| 7071122 | Field effect transistor with etched-back gate dielectric | Katherine L. Saenger, Rajarao Jammy | 2006-07-04 |
| 7067422 | Method of forming a tantalum-containing gate electrode structure | Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano, Gert Leusink, Fenton R. McFeely +1 more | 2006-06-27 |
| 7056782 | CMOS silicide metal gate integration | Ricky S. Amos, Diane C. Boyd, Cyril Cabral, Jr., Richard D. Kaplan, Jakub Kedzierski +6 more | 2006-06-06 |