Issued Patents All Time
Showing 126–150 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9299799 | Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure | Catherine A. Dubourdieu, Martin M. Frank | 2016-03-29 |
| 9263344 | Low threshold voltage CMOS device | Takashi Ando, Changhwan Choi, Kisik Choi | 2016-02-16 |
| 9263276 | High-k/metal gate transistor with L-shaped gate encapsulation layer | Renee T. Mo, Wesley C. Natzle, Jeffrey W. Sleight | 2016-02-16 |
| 9257289 | Lowering parasitic capacitance of replacement metal gate processes | Effendi Leobandung | 2016-02-09 |
| 9252018 | High-k/metal gate transistor with L-shaped gate encapsulation layer | Renee T. Mo, Wesley C. Natzle, Jeffrey W. Sleight | 2016-02-02 |
| 9252229 | Inversion thickness reduction in high-k gate stacks formed by replacement gate processes | Takashi Ando | 2016-02-02 |
| 9236314 | High-K/metal gate stack using capping layer methods, IC and related transistors | Michael P. Chudzik, Naim Moumen, Dae-Gyu Park, Vamsi K. Paruchuri | 2016-01-12 |
| 9231072 | Multi-composition gate dielectric field effect transistors | Emre Alptekin, Unoh Kwon, Wing L. Lai, Zhengwen Li, Ravikumar Ramachandran +1 more | 2016-01-05 |
| 9224826 | Multiple thickness gate dielectrics for replacement gate field effect transistors | Unoh Kwon, Wing L. Lai, Sean M. Polvino, Ravikumar Ramachandran, Shahab Siddiqui | 2015-12-29 |
| 9196707 | Oxygen scavenging spacer for a gate electrode | Michael P. Chudzik, Deleep R. Nair, Carl Radens, Jay M. Shah | 2015-11-24 |
| 9177868 | Annealing oxide gate dielectric layers for replacement metal gate field effect transistors | Unoh Kwon, Wing L. Lai, Ravikumar Ramachandran, Shahab Siddiqui | 2015-11-03 |
| 9105745 | Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFET | Takashi Ando, Changhwan Choi, Martin M. Frank, Unoh Kwon | 2015-08-11 |
| 9099393 | Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures | Takashi Ando, Eduard A. Cartier, Kisik Choi, Wing L. Lai, Ravikumar Ramachandran | 2015-08-04 |
| 9059314 | Structure and method to obtain EOT scaled dielectric stacks | Hemanth Jagannathan, Takashi Ando, Lisa F. Edge, Sufi Zafar, Changhwan Choi +2 more | 2015-06-16 |
| 9059211 | Oxygen scavenging spacer for a gate electrode | Michael P. Chudzik, Deleep R. Nair, Carl Radens, Jay M. Shah | 2015-06-16 |
| 9041082 | Engineering multiple threshold voltages in an integrated circuit | Catherine A. Dubourdieu, Martin M. Frank | 2015-05-26 |
| 9041118 | Replacement metal gate structure for CMOS device | Takashi Ando, Kisik Choi | 2015-05-26 |
| 8999831 | Method to improve reliability of replacement gate device | Takashi Ando, Eduard A. Cartier, Kisik Choi | 2015-04-07 |
| 8940599 | Scaled equivalent oxide thickness for field effect transistor devices | Takashi Ando, Changhwan Choi, Unoh Kwon | 2015-01-27 |
| 8941184 | Low threshold voltage CMOS device | Takashi Ando, Changhwan Choi, Kisik Choi | 2015-01-27 |
| 8895434 | Replacement metal gate structure for CMOS device | Takashi Ando, Kisik Choi | 2014-11-25 |
| 8878298 | Multiple Vt field-effect transistor devices | Josephine B. Chang, Leland Chang, Renee T. Mo, Jeffrey W. Sleight | 2014-11-04 |
| 8865551 | Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material | Takashi Ando, Martin M. Frank | 2014-10-21 |
| 8853751 | Reducing the inversion oxide thickness of a high-K stack fabricated on high mobility semiconductor material | Takashi Ando, Martin M. Frank | 2014-10-07 |
| 8836048 | Field effect transistor device having a hybrid metal gate stack | Cyril Cabral, Jr., Josephine B. Chang, Michael P. Chudzik, Martin M. Frank, Michael A. Guillorn +2 more | 2014-09-16 |