Issued Patents All Time
Showing 76–100 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10062693 | Patterned gate dielectrics for III-V-based CMOS circuits | Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen | 2018-08-28 |
| 10062694 | Patterned gate dielectrics for III-V-based CMOS circuits | Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen | 2018-08-28 |
| 10026041 | Interoperable machine learning platform | Sudarshan Raghunathan, Akshaya Annavajhala | 2018-07-17 |
| 10008386 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee | 2018-06-26 |
| 10002937 | Shared metal gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2018-06-19 |
| 10002871 | High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Pranita Kerber | 2018-06-19 |
| 9997519 | Dual channel structures with multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn | 2018-06-12 |
| 9985206 | Resistive switching memory stack for three-dimensional structure | Takashi Ando, John Rozen | 2018-05-29 |
| 9984940 | Selective and conformal passivation layer for 3D high-mobility channel devices | Jack O. Chu, Stephen M. Gates, Masanobu Hatanaka, Deborah A. Neumayer, Yohei Ogawa +1 more | 2018-05-29 |
| 9984870 | Combined reactive gas species for high-mobility channel passivation | Takashi Ando, Yohei Ogawa, John Rozen | 2018-05-29 |
| 9972697 | Method to improve reliability of replacement gate device | Takashi Ando, Eduard A. Cartier, Kisik Choi | 2018-05-15 |
| 9972695 | Binary metal oxide based interlayer for high mobility channels | Yohei Ogawa, John Rozen | 2018-05-15 |
| 9960252 | Method to improve reliability of replacement gate device | Takashi Ando, Eduard A. Cartier, Kisik Choi | 2018-05-01 |
| 9960233 | Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor | Siddarth A. Krishnan, Unoh Kwon, Jeffrey W. Sleight | 2018-05-01 |
| 9941282 | Integrated metal gate CMOS devices | Ruqiang Bao, Dechao Guo | 2018-04-10 |
| 9911597 | Trench metal insulator metal capacitor with oxygen gettering layer | Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more | 2018-03-06 |
| 9899264 | Integrated metal gate CMOS devices | Ruqiang Bao, Dechao Guo | 2018-02-20 |
| 9859279 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Pranita Kerber | 2018-01-02 |
| 9859169 | Field effect transistor stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2018-01-02 |
| 9799656 | Semiconductor device having a gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2017-10-24 |
| 9793397 | Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor | Takashi Ando, Martin M. Frank | 2017-10-17 |
| 9748145 | Semiconductor devices with varying threshold voltage and fabrication methods thereof | Balaji Kannan, Unoh Kwon, Siddarth A. Krishnan, Takashi Ando | 2017-08-29 |
| 9685521 | Lowering parasitic capacitance of replacement metal gate processes | Effendi Leobandung | 2017-06-20 |
| 9660027 | Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor | Siddarth A. Krishnan, Unoh Kwon, Jeffrey W. Sleight | 2017-05-23 |
| 9653534 | Trench metal-insulator-metal capacitor with oxygen gettering layer | Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more | 2017-05-16 |