Issued Patents All Time
Showing 51–75 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10396077 | Patterned gate dielectrics for III-V-based CMOS circuits | Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen | 2019-08-27 |
| 10396076 | Structure and method for multiple threshold voltage definition in advanced CMOS device technology | Hemanth Jagannathan | 2019-08-27 |
| 10381431 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end | Martin M. Frank, Takashi Ando, Xiao Sun, Jin-Ping Han | 2019-08-13 |
| 10361281 | Method to improve reliability of replacement gate device | Takashi Ando, Eduard A. Cartier, Kisik Choi | 2019-07-23 |
| 10332883 | Integrated metal gate CMOS devices | Ruqiang Bao, Dechao Guo | 2019-06-25 |
| 10332957 | Stacked capacitor with symmetric leakage and break-down behaviors | Takashi Ando, Eduard A. Cartier, Adam M. Pyzyna | 2019-06-25 |
| 10319818 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end | Martin M. Frank, Takashi Ando, Xiao Sun, Jin-Ping Han | 2019-06-11 |
| 10312157 | Field effect transistor stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2019-06-04 |
| 10304936 | Protection of high-K dielectric during reliability anneal on nanosheet structures | Nicolas Loubet, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2019-05-28 |
| 10297671 | Uniform threshold voltage for nanosheet devices | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Koji Watanabe | 2019-05-21 |
| 10297598 | Formation of full metal gate to suppress interficial layer growth | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee | 2019-05-21 |
| 10283610 | Binary metal oxide based interlayer for high mobility channels | Yohei Ogawa, John Rozen | 2019-05-07 |
| 10270029 | Resistive switching memory stack for three-dimensional structure | Takashi Ando, John Rozen | 2019-04-23 |
| 10262999 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Pranita Kerber | 2019-04-16 |
| 10249543 | Field effect transistor stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2019-04-02 |
| 10249540 | Dual channel CMOS having common gate stacks | Takashi Ando, Hemanth Jagannathan, Choonghyun Lee | 2019-04-02 |
| 10243055 | Shared metal gate stack with tunable work function | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2019-03-26 |
| 10229856 | Dual channel CMOS having common gate stacks | Takashi Ando, Hemanth Jagannathan, Choonghyun Lee | 2019-03-12 |
| 10217835 | Binary metal oxide based interlayer for high mobility channels | Yohei Ogawa, John Rozen | 2019-02-26 |
| 10217834 | Binary metal oxide based interlayer for high mobility channels | Yohei Ogawa, John Rozen | 2019-02-26 |
| 10217745 | High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Pranita Kerber | 2019-02-26 |
| 10153201 | Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs | Huiming Bu, Hui-feng Li, Hiroaki Niimi, Tenko Yamashita | 2018-12-11 |
| 10147782 | Tapered metal nitride structure | Martin M. Frank, Hiroyuki Miyazoe | 2018-12-04 |
| 10084055 | Uniform threshold voltage for nanosheet devices | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Koji Watanabe | 2018-09-25 |
| 10079182 | Field effect transistor gate stack | Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon | 2018-09-18 |