Issued Patents All Time
Showing 51–75 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10249753 | Gate cut on a vertical field effect transistor with a defined-width inorganic mask | Brent A. Anderson, Jeffrey C. Shearer, Stuart A. Sieg, John R. Sporre, Junli Wang | 2019-04-02 |
| 10249622 | Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation | Karthik Balakrishnan, Keith E. Fogel, Alexander Reznicek | 2019-04-02 |
| 10249512 | Tunable TiOxNy hardmask for multilayer patterning | Abraham Arceo de la Pena, Ekmini Anuja De Silva, Nelson Felix | 2019-04-02 |
| 10243079 | Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning | Andrew M. Greene, Hong He, Gauri Karve, Eric R. Miller, Pietro Montanini | 2019-03-26 |
| 10242981 | Fin cut during replacement gate formation | Andrew M. Greene, Balasubramanian Pranatharthiharan, John R. Sporre | 2019-03-26 |
| 10242952 | Registration mark formation during sidewall image transfer process | David J. Conklin, Allen H. Gabor, Byeong Y. Kim, Fee Li Lie, Stuart A. Sieg | 2019-03-26 |
| 10224326 | Fin cut during replacement gate formation | Andrew M. Greene, Balasubramanian Pranatharthiharan, John R. Sporre | 2019-03-05 |
| 10211321 | Stress retention in fins of fin field-effect transistors | Gauri Karve, Juntao Li, Fee Li Lie, Stuart A. Sieg, John R. Sporre | 2019-02-19 |
| 10211319 | Stress retention in fins of fin field-effect transistors | Gauri Karve, Juntao Li, Fee Li Lie, Stuart A. Sieg, John R. Sporre | 2019-02-19 |
| 10170471 | Bulk fin formation with vertical fin sidewall profile | Kangguo Cheng, Hong He, Chiahsun Tseng, Yunpeng Yin | 2019-01-01 |
| 10170581 | FinFET with reduced parasitic capacitance | Emre Alptekin, Veeraraghavan S. Basker | 2019-01-01 |
| 10163721 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Fee Li Lie, Peng Xu | 2018-12-25 |
| 10157745 | High aspect ratio gates | Kangguo Cheng, Peng Xu | 2018-12-18 |
| 10134595 | High aspect ratio gates | Kangguo Cheng, Peng Xu | 2018-11-20 |
| 10121661 | Self aligned pattern formation post spacer etchback in tight pitch configurations | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Christopher J. Penny +2 more | 2018-11-06 |
| 10121785 | Pitch scalable active area patterning structure and process for multi-channel fin FET technologies | Fee Li Lie, Eric R. Miller, Stuart A. Sieg | 2018-11-06 |
| 10121853 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10121852 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10115724 | Double diffusion break gate structure without vestigial antenna capacitance | Alexander Reznicek | 2018-10-30 |
| 10083864 | Self aligned conductive lines with relaxed overlay | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Yann Mignot, Christopher J. Penny +2 more | 2018-09-25 |
| 10083964 | Double diffusion break gate structure without vestigial antenna capacitance | Alexander Reznicek | 2018-09-25 |
| 10079148 | Material removal process for self-aligned contacts | Ahmet S. Ozcan | 2018-09-18 |
| 10056290 | Self-aligned pattern formation for a semiconductor device | Sean D. Burns, Lawrence A. Clevenger, Nelson Felix, Christopher J. Penny, Nicole Saulnier | 2018-08-21 |
| 10050039 | Semiconductor structures with deep trench capacitor and methods of manufacture | Kevin K. Chan, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung, Theodorus E. Standaert +1 more | 2018-08-14 |
| 10043760 | Registration mark formation during sidewall image transfer process | David J. Conklin, Allen H. Gabor, Byeong Y. Kim, Fee Li Lie, Stuart A. Sieg | 2018-08-07 |