Issued Patents All Time
Showing 1–25 of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11742684 | Charging control circuit, charging circuit and charging control method | — | 2023-08-29 |
| 10566454 | Self-aligned contact process enabled by low temperature | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2020-02-18 |
| 10529858 | FinFET with merge-free fins | Hong He, Chiahsun Tseng, Junli Wang, Chun-Chen Yeh | 2020-01-07 |
| 10340368 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2019-07-02 |
| 10170471 | Bulk fin formation with vertical fin sidewall profile | Kangguo Cheng, Hong He, Sivananda K. Kanakasabapathy, Chiahsun Tseng | 2019-01-01 |
| 10168075 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Juntao Li, Chih-Chao Yang | 2019-01-01 |
| 10170327 | Fin density control of multigate devices through sidewall image transfer processes | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2019-01-01 |
| 10164060 | Work function metal fill for replacement gate fin field effect transistor process | Hong He, Junli Wang, Yongan Xu | 2018-12-25 |
| 10147803 | Work function metal fill for replacement gate fin field effect transistor process | Hong He, Junli Wang, Yongan Xu | 2018-12-04 |
| 10141428 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2018-11-27 |
| 10037944 | Self-aligned contact process enabled by low temperature | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2018-07-31 |
| 10020303 | Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer | Hong He, Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh | 2018-07-10 |
| 9997367 | Non-lithographic line pattern formation | Chiahsun Tseng, David V. Horak, Chun-Chen Yeh | 2018-06-12 |
| 9991258 | FinFETs with non-merged epitaxial S/D extensions having a SiGe seed layer on insulator | Hong He, Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh | 2018-06-05 |
| 9991255 | FinFETs with non-merged epitaxial S/D extensions on a seed layer and having flat top surfaces | Hong He, Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh | 2018-06-05 |
| 9985030 | FinFET semiconductor device having integrated SiGe fin | Kangguo Cheng, Hong He, Ali Khakifirooz, Chiahsun Tseng, Chun-Chen Yeh | 2018-05-29 |
| 9953916 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Juntao Li, Chih-Chao Yang | 2018-04-24 |
| 9768276 | Method and structure of forming FinFET electrical fuse structure | Hong He, Juntao Li, Chih-Chao Yang | 2017-09-19 |
| 9728534 | Densely spaced fins for semiconductor fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-08-08 |
| 9728625 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2017-08-08 |
| 9728419 | Fin density control of multigate devices through sidewall image transfer processes | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-08-08 |
| 9716038 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Juntao Li, Chih-Chao Yang | 2017-07-25 |
| 9647092 | Method and structure of forming FinFET electrical fuse structure | Hong He, Juntao Li, Chih-Chao Yang | 2017-05-09 |
| 9634117 | Self-aligned contact process enabled by low temperature | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-04-25 |
| 9634000 | Partially isolated fin-shaped field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-04-25 |