Issued Patents All Time
Showing 26–50 of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9627263 | Stop layer through ion implantation for etch stop | Hong He, Siva Kanakasabapathy, Chiahsun Tseng, Junli Wang | 2017-04-18 |
| 9595473 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Juntao Li, Chih-Chao Yang | 2017-03-14 |
| 9583585 | Gate structure integration scheme for fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-02-28 |
| 9558999 | Ultra-thin metal wires formed through selective deposition | Juntao Li, Chih-Chao Yang | 2017-01-31 |
| 9543407 | Low-K spacer for RMG finFET formation | Hong He, Chiahsun Tseng, Tenko Yamashita, Chun-Chen Yeh | 2017-01-10 |
| 9515089 | Bulk fin formation with vertical fin sidewall profile | Kangguo Cheng, Hong He, Sivananda K. Kanakasabapathy, Chiahsun Tseng | 2016-12-06 |
| 9508713 | Densely spaced fins for semiconductor fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2016-11-29 |
| 9484440 | Methods for forming FinFETs with non-merged epitaxial fin extensions | Hong He, Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh | 2016-11-01 |
| 9406746 | Work function metal fill for replacement gate fin field effect transistor process | Hong He, Junli Wang, Yongan Xu | 2016-08-02 |
| 9396957 | Non-lithographic line pattern formation | Chiahsun Tseng, David V. Horak, Chun-Chen Yeh | 2016-07-19 |
| 9391155 | Gate structure integration scheme for fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2016-07-12 |
| 9379218 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-06-28 |
| 9373580 | Dual hard mask lithography process | John C. Arnold, Sean D. Burns, Steven J. Holmes, David V. Horak, Muthumanickam Sankarapandian | 2016-06-21 |
| 9330962 | Non-lithographic hole pattern formation | Chiahsun Tseng, David V. Horak, Chun-Chen Yeh | 2016-05-03 |
| 9330965 | Double self aligned via patterning | Hsueh-Chung Chen, Yongan Xu, Ailian Zhao | 2016-05-03 |
| 9324830 | Self-aligned contact process enabled by low temperature | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2016-04-26 |
| 9293345 | Sidewall image transfer with a spin-on hardmask | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2016-03-22 |
| 9257334 | Double self-aligned via patterning | Hsueh-Chung Chen, Yongan Xu, Ailian Zhao | 2016-02-09 |
| 9252022 | Patterning assist feature to mitigate reactive ion etch microloading effect | Daniel James Dechene, Geng Han, Scott M. Mansfield, Stuart A. Sieg | 2016-02-02 |
| 9252243 | Gate structure integration scheme for fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2016-02-02 |
| 9219007 | Double self aligned via patterning | Hsueh-Chung Chen, Yongan Xu, Ailian Zhao | 2015-12-22 |
| 9209178 | finFET isolation by selective cyclic etch | Sivananda K. Kanakasabapathy, Stuart A. Sieg, Theodorus E. Standaert | 2015-12-08 |
| 9105641 | Profile control in interconnect structures | Shyng-Tsong Chen, Samuel S. Choi, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +4 more | 2015-08-11 |
| 9099401 | Sidewall image transfer with a spin-on hardmask | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2015-08-04 |
| 9093326 | Electrically isolated SiGe fin formation by local oxidation | Kangguo Cheng, Hong He, Chiahsun Tseng | 2015-07-28 |