Issued Patents All Time
Showing 151–175 of 225 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9659938 | Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins | Alexander Reznicek | 2017-05-23 |
| 9653537 | Controlling threshold voltage in nanosheet transistors | Paul C. Jamison | 2017-05-16 |
| 9627214 | Stratified gate dielectric stack for gate dielectric leakage reduction | Paul C. Jamison | 2017-04-18 |
| 9627510 | Structure and method for replacement gate integration with self-aligned contacts | Sivananda K. Kanakasabapathy | 2017-04-18 |
| 9595449 | Silicon-germanium semiconductor devices and method of making | Choonghyun Lee | 2017-03-14 |
| 9589845 | Fin cut enabling single diffusion breaks | Sivananda K. Kanakasabapathy, Vamsi K. Paruchuri, Alexander Reznicek | 2017-03-07 |
| 9583489 | Solid state diffusion doping for bulk finFET devices | Brent A. Anderson, Sanjay C. Mehta, Balasubramanian Pranatharthiharan | 2017-02-28 |
| 9577062 | Dual metal gate electrode for reducing threshold voltage | Hiroshi Sunamura | 2017-02-21 |
| 9570569 | Selective thickening of PFET dielectric | Takashi Ando, Barry P. Linder | 2017-02-14 |
| 9548319 | Structure for integration of an III-V compound semiconductor on SOI | Alexander Reznicek | 2017-01-17 |
| 9530651 | Replacement metal gate finFET | Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz | 2016-12-27 |
| 9514948 | Stratified gate dielectric stack for gate dielectric leakage reduction | Paul C. Jamison | 2016-12-06 |
| 9515073 | III-V semiconductor CMOS FinFET device | Alexander Reznicek, Devendra K. Sadana, Charan V. Surisetty | 2016-12-06 |
| 9496183 | Selective thickening of pFET dielectric | Takashi Ando, Barry P. Linder | 2016-11-15 |
| 9490255 | Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments | Lisa F. Edge, Paul C. Jamison, Vamsi K. Paruchuri | 2016-11-08 |
| 9484439 | III-V fin on insulator | Kangguo Cheng, Alexander Reznicek | 2016-11-01 |
| 9472407 | Replacement metal gate FinFET | Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz | 2016-10-18 |
| 9472419 | Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme | Takashi Ando, Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon, Rekha Rajaram | 2016-10-18 |
| 9472408 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Veeraraghavan S. Basker, Johnathan E. Faltermeier, Tenko Yamashita | 2016-10-18 |
| 9437436 | Replacement metal gate FinFET | Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz | 2016-09-06 |
| 9425080 | Non-volatile memory device employing semiconductor nanoparticles | Kangguo Cheng, Robert H. Dennard, Ali Khakifirooz, Tak H. Ning, Ghavam G. Shahidi | 2016-08-23 |
| 9412596 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Veeraraghavan S. Basker, Johnathan E. Faltermeier, Tenko Yamashita | 2016-08-09 |
| 9406679 | Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate | Lisa F. Edge, Balasubramanian S. Haran | 2016-08-02 |
| 9397197 | Forming wrap-around silicide contact on finFET | Dechao Guo, Zuoguang Liu, Shogo Mochizuki | 2016-07-19 |
| 9385207 | Stratified gate dielectric stack for gate dielectric leakage reduction | Paul C. Jamison | 2016-07-05 |