Issued Patents All Time
Showing 76–100 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10438972 | Sub-fin removal for SOI like isolation with uniform active fin height | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Eric R. Miller, John R. Sporre +1 more | 2019-10-08 |
| 10424663 | Super long channel device within VFET architecture | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Eric R. Miller, John R. Sporre +1 more | 2019-09-24 |
| 10418462 | Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process | Brent A. Anderson, Huiming Bu, Terence B. Hook, Junli Wang | 2019-09-17 |
| 10396181 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more | 2019-08-27 |
| 10395939 | Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme | Cheng Chi, Chi-Chun Liu, Ruilong Xie | 2019-08-27 |
| 10381437 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Eric R. Miller, Robert R. Robison, John R. Sporre +1 more | 2019-08-13 |
| 10381348 | Structure and method for equal substrate to channel height between N and P fin-FETs | Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Gauri Karve, Deepika Priyadarshini +2 more | 2019-08-13 |
| 10366928 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Peng Xu | 2019-07-30 |
| 10361127 | Vertical transport FET with two or more gate lengths | Gauri Karve, Indira Seshadri, Mona A. Ebrish, Leigh Anne H. Clevenger, Ekmini Anuja De Silva +1 more | 2019-07-23 |
| 10347759 | Vertical FET structure | Brent A. Anderson, Huiming Bu, Edward J. Nowak, Junli Wang | 2019-07-09 |
| 10326017 | Formation of a bottom source-drain for vertical field-effect transistors | Marc A. Bergendahl, Kangguo Cheng, Shogo Mochizuki, Junli Wang | 2019-06-18 |
| 10312140 | Dielectric gap fill evaluation for integrated circuits | Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Ekmini Anuja De Silva, Gauri Karve +3 more | 2019-06-04 |
| 10312371 | Self-aligned shallow trench isolation and doping for vertical fin transistors | Brent A. Anderson, Junli Wang | 2019-06-04 |
| 10304744 | Inverse tone direct print EUV lithography enabled by selective material deposition | Praveen Joseph, Ekmini Anuja De Silva, Stuart A. Sieg, Yann Mignot, Indira Seshadri | 2019-05-28 |
| 10304689 | Margin for fin cut using self-aligned triple patterning | Gauri Karve, Eric R. Miller, Stuart A. Sieg, John R. Sporre, Sean Teehan | 2019-05-28 |
| 10297510 | Sidewall image transfer process for multiple gate width patterning | Soon-Cheon Seo, Linus Jang | 2019-05-21 |
| 10269931 | Vertical transport field effect transistor with precise gate length definition | Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, John R. Sporre, Sean Teehan | 2019-04-23 |
| 10263099 | Self-aligned finFET formation | Cheng Chi, Chi-Chun Liu, Ruilong Xie | 2019-04-16 |
| 10256326 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more | 2019-04-09 |
| 10249738 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, John R. Sporre, Sean Teehan | 2019-04-02 |
| 10249730 | Controlling gate profile by inter-layer dielectric (ILD) nanolaminates | Michael P. Belyansky, Andrew M. Greene, Huimei Zhou | 2019-04-02 |
| 10242952 | Registration mark formation during sidewall image transfer process | David J. Conklin, Allen H. Gabor, Sivananda K. Kanakasabapathy, Byeong Y. Kim, Stuart A. Sieg | 2019-03-26 |
| 10229910 | Separate N and P fin etching for reduced CMOS device leakage | Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Gauri Karve +3 more | 2019-03-12 |
| 10224249 | Merged gate for vertical transistors | Brent A. Anderson, Edward J. Nowak, Junli Wang | 2019-03-05 |
| 10211321 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li, Stuart A. Sieg, John R. Sporre | 2019-02-19 |