Issued Patents All Time
Showing 126–150 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9881937 | Preventing strained fin relaxation | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve +3 more | 2018-01-30 |
| 9876074 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Derrick Liu +2 more | 2018-01-23 |
| 9859224 | Registration mark formation during sidewall image transfer process | David J. Conklin, Allen H. Gabor, Sivananda K. Kanakasabapathy, Byeong Y. Kim, Stuart A. Sieg | 2018-01-02 |
| 9853127 | Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process | Brent A. Anderson, Huiming Bu, Terence B. Hook, Junli Wang | 2017-12-26 |
| 9842931 | Self-aligned shallow trench isolation and doping for vertical fin transistors | Brent A. Anderson, Junli Wang | 2017-12-12 |
| 9842739 | Method and structure for enabling high aspect ratio sacrificial gates | Kangguo Cheng, Ryan O. Jung, Jeffrey C. Shearer, John R. Sporre, Sean Teehan | 2017-12-12 |
| 9842737 | Self-aligned quadruple patterning process | Matthew E. Colburn, Sivananda K. Kanakasabapathy, Stuart A. Sieg | 2017-12-12 |
| 9812324 | Methods to control fin tip placement | Lei Zhuang, Lars Liebmann, Stuart A. Sieg, Mahender Kumar, Shreesh Narasimha +3 more | 2017-11-07 |
| 9805991 | Strained finFET device fabrication | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Stuart A. Sieg | 2017-10-31 |
| 9805992 | Strained finFET device fabrication | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Stuart A. Sieg | 2017-10-31 |
| 9805935 | Bottom source/drain silicidation for vertical field-effect transistor (FET) | Brent A. Anderson, Huiming Bu, Terence B. Hook, Junli Wang | 2017-10-31 |
| 9799765 | Formation of a bottom source-drain for vertical field-effect transistors | Marc A. Bergendahl, Kangguo Cheng, Shogo Mochizuki, Junli Wang | 2017-10-24 |
| 9793402 | Retaining strain in finFET devices | Bruce B. Doris, Gauri Karve, Junli Wang | 2017-10-17 |
| 9786666 | Method to form dual channel semiconductor material fins | Kangguo Cheng, Ryan O. Jung, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-10-10 |
| 9754798 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Peng Xu | 2017-09-05 |
| 9754942 | Single spacer for complementary metal oxide semiconductor process flow | Marc A. Bergendahl, Kangguo Cheng, Jessica Dechene, Eric R. Miller, Jeffrey C. Shearer +2 more | 2017-09-05 |
| 9755071 | Merged gate for vertical transistors | Brent A. Anderson, Edward J. Nowak, Junli Wang | 2017-09-05 |
| 9748380 | Vertical transistor including a bottom source/drain region, a gate structure, and an air gap formed between the bottom source/drain region and the gate structure | Shogo Mochizuki, Junli Wang | 2017-08-29 |
| 9748146 | Single spacer for complementary metal oxide semiconductor process flow | Marc A. Bergendahl, Kangguo Cheng, Jessica Dechene, Eric R. Miller, Jeffrey C. Shearer +2 more | 2017-08-29 |
| 9741856 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li, Stuart A. Sieg, John R. Sporre | 2017-08-22 |
| 9728642 | Retaining strain in finFET devices | Bruce B. Doris, Gauri Karve, Junli Wang | 2017-08-08 |
| 9728622 | Dummy gate formation using spacer pull down hardmask | Marc A. Bergendahl, Kangguo Cheng, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-08-08 |
| 9716184 | Enabling large feature alignment marks with sidewall image transfer patterning | Kangguo Cheng, Sivananda K. Kanakasabapathy, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more | 2017-07-25 |
| 9711507 | Separate N and P fin etching for reduced CMOS device leakage | Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Gauri Karve +3 more | 2017-07-18 |
| 9704859 | Forming semiconductor fins with self-aligned patterning | Kangguo Cheng, Peng Xu | 2017-07-11 |