Issued Patents All Time
Showing 101–125 of 142 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10665505 | Self-aligned gate contact isolation | Kangguo Cheng, Peng Xu, Ruilong Xie | 2020-05-26 |
| 10665514 | Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal | Yi Song, Veeraraghavan S. Baskar, Jay William Strane | 2020-05-26 |
| 10665715 | Controlling gate length of vertical transistors | Praveen Joseph, Indira Seshadri, Stuart A. Sieg | 2020-05-26 |
| 10656527 | Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer | Indira Seshadri, Jing Guo, Ashim Dutta, Nelson Felix | 2020-05-19 |
| 10657420 | Modeling post-lithography stochastic critical dimension variation with multi-task neural networks | Jing Sha, Derren N. Dunn | 2020-05-19 |
| 10658190 | Extreme ultraviolet lithography patterning with directional deposition | Yongan Xu, Su Chen Fan, Yann Mignot | 2020-05-19 |
| 10658521 | Enabling residue free gap fill between nanosheets | Indira Seshadri, Jing Guo, Ruqiang Bao, Muthumanickam Sankarapandian, Nelson Felix | 2020-05-19 |
| 10629495 | Low undercut N-P work function metal patterning in nanosheet replacement metal gate process | Indira Seshadri, Jing Guo, Romain Lallement, Ruqiang Bao, Zhenxing Bi +1 more | 2020-04-21 |
| 10629489 | Approach to prevent collapse of high aspect ratio Fin structures for vertical transport Fin field effect transistor devices | Indira Seshadri, Stuart A. Sieg, Praveen Joseph | 2020-04-21 |
| 10622482 | Gate cut using selective deposition to prevent oxide loss | Andrew M. Greene, Siva Kanakasabapathy | 2020-04-14 |
| 10622250 | Dielectric gap fill evaluation for integrated circuits | Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie +3 more | 2020-04-14 |
| 10622248 | Tunable hardmask for overlayer metrology contrast | Nelson Felix, Indira Seshadri, Stuart A. Sieg | 2020-04-14 |
| 10615037 | Tone reversal during EUV pattern transfer using surface active layer assisted selective deposition | Ashim Dutta, Luciana Meli Thompson | 2020-04-07 |
| 10586697 | Wet strippable OPL using reversible UV crosslinking and de-crosslinking | Nelson Felix, Jing Guo, Indira Seshadri | 2020-03-10 |
| 10579764 | Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks | Jing Sha, Derren N. Dunn | 2020-03-03 |
| 10578981 | Post-lithography defect inspection using an e-beam inspection tool | Luciana Meli Thompson, Yasir Sulehria, Nelson Felix | 2020-03-03 |
| 10551742 | Tunable adhesion of EUV photoresist on oxide surface | Yongan Xu, Jing Guo, Oleg Gluschenkov | 2020-02-04 |
| 10545409 | Dynamic adjustment of post exposure bake during lithography utilizing real-time feedback for wafer exposure delay | Cody J. Murray, Alex Richard Hubbard, Karen E. Petrillo, Nelson Felix | 2020-01-28 |
| 10539884 | Post-lithography defect inspection using an e-beam inspection tool | Luciana Meli Thompson, Ashim Dutta | 2020-01-21 |
| 10535529 | Semiconductor fin length variability control | Praveen Joseph, Stuart A. Sieg, Eric R. Miller | 2020-01-14 |
| 10490447 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Juntao Li, Yi Song, Peng Xu | 2019-11-26 |
| 10395925 | Patterning material film stack comprising hard mask layer having high metal content interface to resist layer | Adra Carr, Shanti Pancharatnam, Indira Seshadri, Yasir Sulehria | 2019-08-27 |
| 10388510 | Wet strippable OPL using reversible UV crosslinking and de-crosslinking | Nelson Felix, Jing Guo, Indira Seshadri | 2019-08-20 |
| 10374034 | Undercut control in isotropic wet etch processes | Chi-Chun Liu, Muthumanickam Sankarapandian, Kristin Schmidt, Noel Arellano, Robin Hsin Kuo Chao +2 more | 2019-08-06 |
| 10366879 | Dry and wet etch resistance for atomic layer deposited TiO2 for SIT spacer application | Cornelius Brown Peethala, Abraham Arceo de la Pena | 2019-07-30 |