| 11854894 |
Integrated circuit device structures and double-sided electrical testing |
Valluri Rao, Rishabh Mehandru, Doug B. Ingerly, Kimin Jun, Kevin P. O'Brien +3 more |
2023-12-26 |
$39,948,000 |
| 11830933 |
Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach |
Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros, Aaron D. Lilak, Anh Phan +2 more |
2023-11-28 |
$31,872,000 |
| 11798838 |
Capacitance reduction for semiconductor devices based on wafer bonding |
Ehren Mannebach, Aaron D. Lilak, Rishabh Mehandru, Hui Jae Yoo, Kevin Lin |
2023-10-24 |
$20,059,000 |
| 11776898 |
Sidewall interconnect metallization structures for integrated circuit devices |
Aaron D. Lilak, Anh Phan, Gilbert Dewey, Willy Rachmady |
2023-10-03 |
$24,984,000 |
| 11769814 |
Device including air gapping of gate spacers and other dielectrics and process for providing such |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Kevin Lin, Tristan A. Tronic |
2023-09-26 |
$20,953,000 |
| 11764104 |
Forming an oxide volume within a fin |
Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Aaron D. Lilak, Ehren Mannebach +3 more |
2023-09-19 |
$20,015,000 |
| 11764263 |
Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches |
Ehren Mannebach, Anh Phan, Aaron D. Lilak, Willy Rachmady, Gilbert Dewey +3 more |
2023-09-19 |
$20,015,000 |
| 11749649 |
Composite IC chips including a chiplet embedded within metallization layers of a host IC chip |
Adel A. Elsherbini, Johanna M. Swan, Shawna M. Liff, Gerald Pasdast, Van H. Le |
2023-09-05 |
$19,899,000 |
| 11742346 |
Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
Aaron D. Lilak, Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach +4 more |
2023-08-29 |
$19,273,000 |
| 11721649 |
Microelectronic assemblies |
Adel A. Elsherbini, Henning Braunisch, Kimin Jun, Brennen Mueller, Shawna M. Liff +2 more |
2023-08-08 |
$22,376,000 |
| 11699637 |
Vertically stacked transistor devices with isolation wall structures containing an electrical conductor |
Aaron D. Lilak, Anh Phan, Stephanie A. Bojarski |
2023-07-11 |
$21,736,000 |
| 11694986 |
Vias in composite IC chip structures |
Adel A. Elsherbini, Johanna M. Swan, Shawna M. Liff, Mauro Kobrinksy, Van H. Le +1 more |
2023-07-04 |
|
| 11676966 |
Stacked transistors having device strata with different channel widths |
Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz +4 more |
2023-06-13 |
$22,204,000 |
| 11672133 |
Vertically stacked memory elements with air gap |
Aaron D. Lilak, Hui Jae Yoo, Sean T. Ma, Scott B. Clendenning, Abhishek A. Sharma +2 more |
2023-06-06 |
$21,341,000 |
| 11664373 |
Isolation walls for vertically stacked transistor structures |
Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Rishabh Mehandru |
2023-05-30 |
$16,378,000 |
| 11664377 |
Forksheet transistor architectures |
Aaron D. Lilak, Rishabh Mehandru, Ehren Mannebach, Willy Rachmady |
2023-05-30 |
$16,378,000 |
| 11658072 |
Vertically stacked transistors in a fin |
Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru |
2023-05-23 |
$11,397,000 |
| 11658221 |
Backside contact structures and fabrication for metal on both sides of devices |
Rishabh Mehandru, Aaron D. Lilak, Kimin Jun |
2023-05-23 |
$11,397,000 |
| 11658183 |
Metallization structures under a semiconductor device layer |
Aaron D. Lilak, Rishabh Mehandru, Stephen M. Cea |
2023-05-23 |
$11,397,000 |
| 11646352 |
Stacked source-drain-gate connection and process for forming such |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Anh Phan, Willy Rachmady +2 more |
2023-05-09 |
$19,706,000 |
| 11640961 |
III-V source/drain in top NMOS transistors for low temperature stacked transistor contacts |
Gilbert Dewey, Ravi Pillarisetty, Jack T. Kavalieros, Aaron D. Lilak, Willy Rachmady +6 more |
2023-05-02 |
$21,235,000 |
| 11616015 |
Integrated circuit device with back-side interconnection to deep source/drain semiconductor |
Mauro J. Kobrinsky, Mark Bohr, Tahir Ghani, Rishabh Mehandru |
2023-03-28 |
$20,940,000 |
| 11616056 |
Vertical diode in stacked transistor architecture |
Aaron D. Lilak, Anh Phan, Cheng-Ying Huang, Rishabh Mehandru, Gilbert Dewey +1 more |
2023-03-28 |
$20,940,000 |
| 11605565 |
Three dimensional integrated circuits with stacked transistors |
Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Kimin Jun +5 more |
2023-03-14 |
$29,588,000 |
| 11605556 |
Back side processing of integrated circuit structures to form insulation structure between adjacent transistor structures |
Aaron D. Lilak, Rishabh Mehandru |
2023-03-14 |
$29,588,000 |
