| 11843058 |
Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Shriram Shivaraman, Seung Hoon Sung +4 more |
2023-12-12 |
$45,136,000 |
| 11843054 |
Vertical architecture of thin film transistors |
Van H. Le, Seung Hoon Sung, Benjamin Chu-Kung, Miriam Reshotko, Matthew V. Metz +6 more |
2023-12-12 |
$45,136,000 |
| 11837648 |
Stacked thin film transistors with nanowires |
Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani |
2023-12-05 |
$33,749,000 |
| 11830933 |
Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach |
Willy Rachmady, Jack T. Kavalieros, Aaron D. Lilak, Patrick Morrow, Anh Phan +2 more |
2023-11-28 |
$31,872,000 |
| 11784239 |
Subfin leakage suppression using fixed charge |
Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady +5 more |
2023-10-10 |
$20,947,000 |
| 11784251 |
Transistors with ferroelectric spacer and methods of fabrication |
Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros |
2023-10-10 |
$20,947,000 |
| 11777013 |
Channel formation for three dimensional transistors |
Abhishek A. Sharma, Willy Rachmady, Van H. Le, Jack T. Kavalieros, Matthew V. Metz |
2023-10-03 |
$24,984,000 |
| 11776898 |
Sidewall interconnect metallization structures for integrated circuit devices |
Aaron D. Lilak, Anh Phan, Willy Rachmady, Patrick Morrow |
2023-10-03 |
$24,984,000 |
| 11764104 |
Forming an oxide volume within a fin |
Cheng-Ying Huang, Jack T. Kavalieros, Aaron D. Lilak, Ehren Mannebach, Patrick Morrow +3 more |
2023-09-19 |
$20,015,000 |
| 11764306 |
Multi-layer crystalline back gated thin film transistor |
Van H. Le, Abhishek A. Sharma, Kent Millard, Jack T. Kavalieros, Shriram Shivaraman +6 more |
2023-09-19 |
$20,015,000 |
| 11764303 |
Thin film transistors having double gates |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani |
2023-09-19 |
$20,015,000 |
| 11764282 |
Antiferroelectric gate dielectric transistors and their methods of fabrication |
Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Prashant Majhi, Willy Rachmady +1 more |
2023-09-19 |
$20,015,000 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +4 more |
2023-09-19 |
$20,015,000 |
| 11764263 |
Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches |
Ehren Mannebach, Anh Phan, Aaron D. Lilak, Willy Rachmady, Cheng-Ying Huang +3 more |
2023-09-19 |
$20,015,000 |
| 11756998 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2023-09-12 |
$19,004,000 |
| 11742346 |
Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
Aaron D. Lilak, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach, Rishabh Mehandru +4 more |
2023-08-29 |
$19,273,000 |
| 11721735 |
Thin film transistors having U-shaped features |
Aaron D. Lilak, Van H. Le, Abhishek A. Sharma, Tahir Ghani, Willy Rachmady +6 more |
2023-08-08 |
$22,376,000 |
| 11699704 |
Monolithic integration of a thin film transistor over a complimentary transistor |
Van H. Le, Marko Radosavljevic, Han Wui Then, Willy Rachmady, Ravi Pillarisetty +2 more |
2023-07-11 |
$21,736,000 |
| 11695081 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros +4 more |
2023-07-04 |
|
| 11676966 |
Stacked transistors having device strata with different channel widths |
Jack T. Kavalieros, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Kimin Jun +4 more |
2023-06-13 |
$22,204,000 |
| 11670682 |
FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage |
Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani +2 more |
2023-06-06 |
|
| 11664373 |
Isolation walls for vertically stacked transistor structures |
Aaron D. Lilak, Patrick Morrow, Willy Rachmady, Rishabh Mehandru |
2023-05-30 |
$16,378,000 |
| 11658222 |
Thin film transistor with charge trap layer |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani, Shriram Shivaraman +2 more |
2023-05-23 |
$11,397,000 |
| 11658208 |
Thin film transistors for high voltage applications |
Abhishek A. Sharma, Willy Rachmady, Van H. Le, Ravi Pillarisetty |
2023-05-23 |
$11,397,000 |
| 11652606 |
Advanced encryption standard semiconductor devices fabricated on a stacked-substrate |
Abhishek A. Sharma, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2023-05-16 |
$11,130,000 |
