Issued Patents 2023
Showing 25 most recent of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11843058 | Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Shriram Shivaraman, Seung Hoon Sung +4 more | 2023-12-12 |
| 11843054 | Vertical architecture of thin film transistors | Van H. Le, Seung Hoon Sung, Benjamin Chu-Kung, Miriam Reshotko, Matthew V. Metz +6 more | 2023-12-12 |
| 11837648 | Stacked thin film transistors with nanowires | Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani | 2023-12-05 |
| 11830933 | Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach | Willy Rachmady, Jack T. Kavalieros, Aaron D. Lilak, Patrick Morrow, Anh Phan +2 more | 2023-11-28 |
| 11784239 | Subfin leakage suppression using fixed charge | Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady +5 more | 2023-10-10 |
| 11784251 | Transistors with ferroelectric spacer and methods of fabrication | Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros | 2023-10-10 |
| 11777013 | Channel formation for three dimensional transistors | Abhishek A. Sharma, Willy Rachmady, Van H. Le, Jack T. Kavalieros, Matthew V. Metz | 2023-10-03 |
| 11776898 | Sidewall interconnect metallization structures for integrated circuit devices | Aaron D. Lilak, Anh Phan, Willy Rachmady, Patrick Morrow | 2023-10-03 |
| 11764104 | Forming an oxide volume within a fin | Cheng-Ying Huang, Jack T. Kavalieros, Aaron D. Lilak, Ehren Mannebach, Patrick Morrow +3 more | 2023-09-19 |
| 11764306 | Multi-layer crystalline back gated thin film transistor | Van H. Le, Abhishek A. Sharma, Kent Millard, Jack T. Kavalieros, Shriram Shivaraman +6 more | 2023-09-19 |
| 11764303 | Thin film transistors having double gates | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani | 2023-09-19 |
| 11764282 | Antiferroelectric gate dielectric transistors and their methods of fabrication | Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Prashant Majhi, Willy Rachmady +1 more | 2023-09-19 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +4 more | 2023-09-19 |
| 11764263 | Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches | Ehren Mannebach, Anh Phan, Aaron D. Lilak, Willy Rachmady, Cheng-Ying Huang +3 more | 2023-09-19 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more | 2023-09-12 |
| 11742346 | Interconnect techniques for electrically connecting source/drain regions of stacked transistors | Aaron D. Lilak, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach, Rishabh Mehandru +4 more | 2023-08-29 |
| 11721735 | Thin film transistors having U-shaped features | Aaron D. Lilak, Van H. Le, Abhishek A. Sharma, Tahir Ghani, Willy Rachmady +6 more | 2023-08-08 |
| 11699704 | Monolithic integration of a thin film transistor over a complimentary transistor | Van H. Le, Marko Radosavljevic, Han Wui Then, Willy Rachmady, Ravi Pillarisetty +2 more | 2023-07-11 |
| 11695081 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros +4 more | 2023-07-04 |
| 11676966 | Stacked transistors having device strata with different channel widths | Jack T. Kavalieros, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Kimin Jun +4 more | 2023-06-13 |
| 11670682 | FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage | Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani +2 more | 2023-06-06 |
| 11664373 | Isolation walls for vertically stacked transistor structures | Aaron D. Lilak, Patrick Morrow, Willy Rachmady, Rishabh Mehandru | 2023-05-30 |
| 11658222 | Thin film transistor with charge trap layer | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani, Shriram Shivaraman +2 more | 2023-05-23 |
| 11658208 | Thin film transistors for high voltage applications | Abhishek A. Sharma, Willy Rachmady, Van H. Le, Ravi Pillarisetty | 2023-05-23 |
| 11652606 | Advanced encryption standard semiconductor devices fabricated on a stacked-substrate | Abhishek A. Sharma, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2023-05-16 |