| 11769836 |
Gate-all-around integrated circuit structures having nanowires with tight vertical spacing |
Anand S. Murthy, Biswajeet Guha, Tahir Ghani, Susmita Ghose, Zachary Geiger |
2023-09-26 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Chandra S. Mohapatra, Harold W. Kennel, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more |
2023-09-19 |
| 11757004 |
Transistors including source/drain employing double-charge dopants |
Anand S. Murthy, Tahir Ghani |
2023-09-12 |
| 11735670 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2023-08-22 |
| 11699756 |
Source/drain diffusion barrier for germanium nMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2023-07-11 |
| 11658217 |
Transistors with ion- or fixed charge-based field plate structures |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Nidhi Nidhi, Paul B. Fischer +3 more |
2023-05-23 |
| 11610995 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra |
2023-03-21 |
| 11588017 |
Nanowire for transistor integration |
Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan |
2023-02-21 |
| 11581406 |
Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Kelin J. Kuhn +1 more |
2023-02-14 |