Issued Patents 2023
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11854894 | Integrated circuit device structures and double-sided electrical testing | Valluri Rao, Patrick Morrow, Rishabh Mehandru, Doug B. Ingerly, Kimin Jun +3 more | 2023-12-26 |
| 11791221 | Integration of III-N transistors and semiconductor layer transfer | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then | 2023-10-17 |
| 11757027 | E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Han Wui Then +2 more | 2023-09-12 |
| 11721649 | Microelectronic assemblies | Adel A. Elsherbini, Patrick Morrow, Henning Braunisch, Kimin Jun, Brennen Mueller +2 more | 2023-08-08 |
| 11715791 | Group III-Nitride devices on SOI substrates having a compliant layer | Marko Radosavljevic, Han Wui Then, Sansaptak Dasgupta, Kevin Lin | 2023-08-01 |
| 11715790 | Charge-induced threshold voltage tuning in III-N transistors | Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Yang Cao, Han Wui Then +3 more | 2023-08-01 |
| 11705882 | Acoustic resonator structure | Mark Radosavljevic, Sansaptak Dasgupta, Han Wui Then | 2023-07-18 |
| 11670637 | Logic circuit with indium nitride quantum well | Marko Radosavljevic, Sansaptak Dasgupta, Han Wui Then, Walid M. Hafez | 2023-06-06 |
| 11671075 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Sansaptak Dasgupta, Bruce A. Block, Han Wui Then, Marko Radosavljevic | 2023-06-06 |
| 11670709 | III-N transistors with local stressors for threshold voltage control | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Nidhi Nidhi, Rahul Ramaswamy +2 more | 2023-06-06 |
| 11664417 | III-N metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials | Walid M. Hafez, Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic | 2023-05-30 |
| 11658217 | Transistors with ion- or fixed charge-based field plate structures | Han Wui Then, Marko Radosavljevic, Glenn A. Glass, Sansaptak Dasgupta, Nidhi Nidhi +3 more | 2023-05-23 |
| 11652143 | III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics | Han Wui Then, Nidhi Nidhi, Rahul Ramaswamy, Walid M. Hafez, Samuel J. Beach +4 more | 2023-05-16 |
| 11626513 | Antenna gate field plate on 2DEG planar FET | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Han Wui Then +3 more | 2023-04-11 |
| 11616488 | FBAR devices having multiple epitaxial layers stacked on a same substrate | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic | 2023-03-28 |
| 11616014 | Peripheral inductors | Kevin Lin | 2023-03-28 |
| 11610971 | Cap layer on a polarization layer to preserve channel sheet resistance | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Nidhi Nidhi, Rahul Ramaswamy +2 more | 2023-03-21 |
| 11610887 | Side-by-side integration of III-n transistors and thin-film transistors | Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez | 2023-03-21 |
| 11594452 | Techniques for revealing a backside of an integrated circuit device, and associated configurations | Il-Seok Son, Colin T. Carver, Patrick Morrow, Kimin Jun | 2023-02-28 |
| 11594524 | Fabrication and use of through silicon vias on double sided interconnect device | Brennen Mueller, Patrick Morrow, Kimin Jun, Daniel Pantuso | 2023-02-28 |
| 11588037 | Planar transistors with wrap-around gates and wrap-around source and drain contacts | Nidhi Nidhi, Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta +2 more | 2023-02-21 |
| 11587924 | Integration of passive components in III-N devices | Nidhi Nidhi, Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Johann Christian Rode +1 more | 2023-02-21 |
| 11581313 | Integration of III-N transistors and non-III-N transistors by semiconductor regrowth | Sansaptak Dasgupta, Johann Christian Rode, Han Wui Then, Marko Radosavljevic, Nidhi Nidhi +3 more | 2023-02-14 |
| 11563098 | Transistor gate shape structuring approaches | Marko Radosavljevic, Han Wui Then, Sansaptak Dasgupta | 2023-01-24 |
| 11557667 | Group III-nitride devices with improved RF performance and their methods of fabrication | Marko Radosavljevic, Sansaptak Dasgupta, Han Wui Then, Ibrahim Ban | 2023-01-17 |