Issued Patents 2023
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848362 | III-N transistors with contacts of modified widths | Rahul Ramaswamy, Walid M. Hafez, Johann Christian Rode, Han Wui Then, Marko Radosavljevic +1 more | 2023-12-19 |
| 11830818 | Semiconductor device having metal interconnects with different thicknesses | Kinyip Phoa, Jui-Yen Lin, Chia-Hong Jan | 2023-11-28 |
| 11791380 | Single gated 3D nanowire inverter for high density thick gate SOC applications | Rahul Ramaswamy, Walid M. Hafez, Tanuj Trivedi, Jeong Dong Kim, Ting Chang +2 more | 2023-10-17 |
| 11757027 | E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown | Rahul Ramaswamy, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer, Han Wui Then +2 more | 2023-09-12 |
| 11737362 | Harvesting energy in an integrated circuit using the seebeck effect | Kinyip Phoa, Jui-Yen Lin, Chia-Hong Jan | 2023-08-22 |
| 11715790 | Charge-induced threshold voltage tuning in III-N transistors | Marko Radosavljevic, Sansaptak Dasgupta, Yang Cao, Han Wui Then, Johann Christian Rode +3 more | 2023-08-01 |
| 11688788 | Transistor gate structure with hybrid stacks of dielectric material | Johann Christian Rode, Samuel J. Beach, Rahul Ramaswamy, Han Wui Then, Walid M. Hafez | 2023-06-27 |
| 11670709 | III-N transistors with local stressors for threshold voltage control | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Rahul Ramaswamy, Paul B. Fischer +2 more | 2023-06-06 |
| 11658217 | Transistors with ion- or fixed charge-based field plate structures | Han Wui Then, Marko Radosavljevic, Glenn A. Glass, Sansaptak Dasgupta, Paul B. Fischer +3 more | 2023-05-23 |
| 11652143 | III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics | Han Wui Then, Paul B. Fischer, Rahul Ramaswamy, Walid M. Hafez, Samuel J. Beach +4 more | 2023-05-16 |
| 11626513 | Antenna gate field plate on 2DEG planar FET | Rahul Ramaswamy, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer, Han Wui Then +3 more | 2023-04-11 |
| 11610971 | Cap layer on a polarization layer to preserve channel sheet resistance | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Rahul Ramaswamy, Johann Christian Rode +2 more | 2023-03-21 |
| 11588037 | Planar transistors with wrap-around gates and wrap-around source and drain contacts | Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Johann Christian Rode +2 more | 2023-02-21 |
| 11587924 | Integration of passive components in III-N devices | Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Johann Christian Rode, Paul B. Fischer +1 more | 2023-02-21 |
| 11581313 | Integration of III-N transistors and non-III-N transistors by semiconductor regrowth | Sansaptak Dasgupta, Johann Christian Rode, Han Wui Then, Marko Radosavljevic, Paul B. Fischer +3 more | 2023-02-14 |