Issued Patents 2023
Showing 25 most recent of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848362 | III-N transistors with contacts of modified widths | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Han Wui Then +1 more | 2023-12-19 |
| 11799057 | Group III-nitride light emitting devices including a polarization junction | Han Wui Then, Marko Radosavljevic | 2023-10-24 |
| 11791221 | Integration of III-N transistors and semiconductor layer transfer | Marko Radosavljevic, Han Wui Then, Paul B. Fischer | 2023-10-17 |
| 11784121 | Integrated circuit components with dummy structures | Kevin Lin, Nicholas James Harold McKubre, Richard Vreeland | 2023-10-10 |
| 11777022 | Transistors including first and second semiconductor materials between source and drain regions and methods of manufacturing the same | Marko Radosavljevic, Han Wui Then | 2023-10-03 |
| 11757027 | E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer +2 more | 2023-09-12 |
| 11728346 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Han Wui Then | 2023-08-15 |
| 11715790 | Charge-induced threshold voltage tuning in III-N transistors | Nidhi Nidhi, Marko Radosavljevic, Yang Cao, Han Wui Then, Johann Christian Rode +3 more | 2023-08-01 |
| 11715799 | Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping | Marko Radosavljevic, Han Wui Then | 2023-08-01 |
| 11715791 | Group III-Nitride devices on SOI substrates having a compliant layer | Marko Radosavljevic, Han Wui Then, Kevin Lin, Paul B. Fischer | 2023-08-01 |
| 11710765 | High aspect ratio non-planar capacitors formed via cavity fill | Marko Radosavljevic, Han Wui Then | 2023-07-25 |
| 11705882 | Acoustic resonator structure | Paul B. Fischer, Mark Radosavljevic, Han Wui Then | 2023-07-18 |
| 11699704 | Monolithic integration of a thin film transistor over a complimentary transistor | Van H. Le, Marko Radosavljevic, Han Wui Then, Willy Rachmady, Ravi Pillarisetty +2 more | 2023-07-11 |
| 11670637 | Logic circuit with indium nitride quantum well | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2023-06-06 |
| 11670686 | III-N nanostructures formed via cavity fill | Marko Radosavljevic, Han Wui Then | 2023-06-06 |
| 11670709 | III-N transistors with local stressors for threshold voltage control | Marko Radosavljevic, Han Wui Then, Nidhi Nidhi, Rahul Ramaswamy, Paul B. Fischer +2 more | 2023-06-06 |
| 11671075 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2023-06-06 |
| 11664417 | III-N metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials | Walid M. Hafez, Han Wui Then, Marko Radosavljevic, Paul B. Fischer | 2023-05-30 |
| 11658217 | Transistors with ion- or fixed charge-based field plate structures | Han Wui Then, Marko Radosavljevic, Glenn A. Glass, Nidhi Nidhi, Paul B. Fischer +3 more | 2023-05-23 |
| 11652143 | III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics | Han Wui Then, Nidhi Nidhi, Paul B. Fischer, Rahul Ramaswamy, Walid M. Hafez +4 more | 2023-05-16 |
| 11637093 | Micro light-emitting diode display fabrication and assembly | Khaled Ahmed, Anup Pancholi, Chad Eric Mair | 2023-04-25 |
| 11626513 | Antenna gate field plate on 2DEG planar FET | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer +3 more | 2023-04-11 |
| 11616488 | FBAR devices having multiple epitaxial layers stacked on a same substrate | Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2023-03-28 |
| 11610887 | Side-by-side integration of III-n transistors and thin-film transistors | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2023-03-21 |
| 11610971 | Cap layer on a polarization layer to preserve channel sheet resistance | Marko Radosavljevic, Han Wui Then, Nidhi Nidhi, Rahul Ramaswamy, Johann Christian Rode +2 more | 2023-03-21 |