Issued Patents 2023
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11798991 | Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly | Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Tahir Ghani | 2023-10-24 |
| 11784239 | Subfin leakage suppression using fixed charge | Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Willy Rachmady, Gilbert Dewey +5 more | 2023-10-10 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more | 2023-09-19 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey +4 more | 2023-09-12 |
| 11695081 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros +4 more | 2023-07-04 |
| 11637185 | Contact stacks to reduce hydrogen in semiconductor devices | Justin R. Weber, Abhishek A. Sharma, Christopher J. Jezewski, Matthew V. Metz, Tahir Ghani +4 more | 2023-04-25 |
| 11581406 | Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer | Stephen M. Cea, Roza Kotlyar, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more | 2023-02-14 |
| 11557658 | Transistors with high density channel semiconductor over dielectric material | Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more | 2023-01-17 |