| 11804523 |
High aspect ratio source or drain structures with abrupt dopant profile |
Ryan Keech, Anand S. Murthy, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more |
2023-10-31 |
| 11756998 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2023-09-12 |
| 11695081 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Sean T. Ma, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy +4 more |
2023-07-04 |
| 11610889 |
Arsenic-doped epitaxial, source/drain regions for NMOS |
Anand S. Murthy, Ryan Keech, Ritesh Jhaveri |
2023-03-21 |
| 11557658 |
Transistors with high density channel semiconductor over dielectric material |
Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more |
2023-01-17 |
| 11552169 |
Source or drain structures with phosphorous and arsenic co-dopants |
Anand S. Murthy, Ryan Keech, Suresh Vishwanath |
2023-01-10 |