| 11849572 |
3D 1T1C stacked DRAM structure and method to fabricate |
Aaron D. Lilak, Abhishek A. Sharma |
2023-12-19 |
| 11784239 |
Subfin leakage suppression using fixed charge |
Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady, Gilbert Dewey +5 more |
2023-10-10 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +4 more |
2023-09-19 |
| 11756998 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2023-09-12 |
| 11749715 |
Isolation regions in integrated circuit structures |
Guillaume Bouche, Andy Wei |
2023-09-05 |
| 11695081 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy +4 more |
2023-07-04 |
| 11672133 |
Vertically stacked memory elements with air gap |
Aaron D. Lilak, Patrick Morrow, Hui Jae Yoo, Scott B. Clendenning, Abhishek A. Sharma +2 more |
2023-06-06 |
| 11670682 |
FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra +2 more |
2023-06-06 |
| 11658222 |
Thin film transistor with charge trap layer |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani, Gilbert Dewey +2 more |
2023-05-23 |
| 11658072 |
Vertically stacked transistors in a fin |
Aaron D. Lilak, Justin R. Weber, Patrick Morrow, Rishabh Mehandru |
2023-05-23 |
| 11574910 |
Device with air-gaps to reduce coupling capacitance and process for forming such |
Abhishek A. Sharma, Willy Rachmady, Van H. Le, Travis W. Lajoie, Urusa Alaan +2 more |
2023-02-07 |
| 11569238 |
Vertical memory cells |
Aaron D. Lilak, Willy Rachmady, Gilbert Dewey, Kimin Jun, Hui Jae Yoo +5 more |
2023-01-31 |
| 11557658 |
Transistors with high density channel semiconductor over dielectric material |
Gilbert Dewey, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang, Anand S. Murthy +3 more |
2023-01-17 |