Issued Patents 2023
Showing 25 most recent of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855223 | Self-aligned gate endcap (SAGE) architectures with gate-all-around devices | Biswajeet Guha, William Hsu, Leonard P. GULER, Dax M. Crum | 2023-12-26 |
| 11843054 | Vertical architecture of thin film transistors | Van H. Le, Seung Hoon Sung, Benjamin Chu-Kung, Miriam Reshotko, Matthew V. Metz +6 more | 2023-12-12 |
| 11843058 | Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures | Gilbert Dewey, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Shriram Shivaraman +4 more | 2023-12-12 |
| 11843052 | Transistor contact area enhancement | Rishabh Mehandru, Stephen M. Cea | 2023-12-12 |
| 11837648 | Stacked thin film transistors with nanowires | Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros | 2023-12-05 |
| 11837641 | Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact | Biswajeet Guha, William Hsu, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka +5 more | 2023-12-05 |
| 11832438 | Capacitor connections in dielectric layers | Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more | 2023-11-28 |
| 11824116 | Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact | Biswajeet Guha, William Hsu, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka +5 more | 2023-11-21 |
| 11824107 | Wrap-around contact structures for semiconductor nanowires and nanoribbons | Rishabh Mehandru, Stephen M. Cea, Biswajeet Guha | 2023-11-21 |
| 11798991 | Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly | Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Harold W. Kennel | 2023-10-24 |
| 11799015 | Gate cut and fin trim isolation for advanced integrated circuit structure fabrication | Byron Ho, Michael L. Hattendorf, Christopher P. Auth | 2023-10-24 |
| 11799009 | Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact | Biswajeet Guha, William Hsu, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka | 2023-10-24 |
| 11799037 | Gate-all-around integrated circuit structures having asymmetric source and drain contact structures | Biswajeet Guha, Mauro J. Kobrinsky | 2023-10-24 |
| 11784239 | Subfin leakage suppression using fixed charge | Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady +5 more | 2023-10-10 |
| 11776959 | Wrap-around trench contact structure and methods of fabrication | Joseph M. Steigerwald, Oleg Golonzka | 2023-10-03 |
| 11777029 | Vertical transistors for ultra-dense logic and memory applications | Nazila Haratipour, I-Cheng Tung, Abhishek A. Sharma, Arnab Sen Gupta, Van H. Le +2 more | 2023-10-03 |
| 11769836 | Gate-all-around integrated circuit structures having nanowires with tight vertical spacing | Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Susmita Ghose, Zachary Geiger | 2023-09-26 |
| 11764306 | Multi-layer crystalline back gated thin film transistor | Van H. Le, Abhishek A. Sharma, Gilbert Dewey, Kent Millard, Jack T. Kavalieros +6 more | 2023-09-19 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +4 more | 2023-09-19 |
| 11764303 | Thin film transistors having double gates | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Gilbert Dewey | 2023-09-19 |
| 11757037 | Epitaxial oxide plug for strained transistors | Karthik Jambunathan, Biswajeet Guha, Anupama Bowonder, Anand S. Murthy | 2023-09-12 |
| 11758711 | Thin-film transistor embedded dynamic random-access memory with shallow bitline | Yih Wang, Abhishek A. Sharma, Allen B. Gardiner, Travis W. Lajoie, Pei-Hua Wang +4 more | 2023-09-12 |
| 11757004 | Transistors including source/drain employing double-charge dopants | Glenn A. Glass, Anand S. Murthy | 2023-09-12 |
| 11756829 | Gate aligned contact and method to fabricate same | Oleg Golonzka, Swaminathan Sivakumar, Charles H. Wallace | 2023-09-12 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel, Gilbert Dewey +4 more | 2023-09-12 |