| 11843052 |
Transistor contact area enhancement |
Rishabh Mehandru, Tahir Ghani |
2023-12-12 |
| 11824107 |
Wrap-around contact structures for semiconductor nanowires and nanoribbons |
Rishabh Mehandru, Tahir Ghani, Biswajeet Guha |
2023-11-21 |
| 11757026 |
Nanowire structures having wrap-around contacts |
Cory E. Weber, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2023-09-12 |
| 11705518 |
Isolation schemes for gate-all-around transistor devices |
Rishabh Mehandru, Biswajeet Guha, Tahir Ghani, William Hsu |
2023-07-18 |
| 11688780 |
Deep source and drain for transistor structures with back-side contact metallization |
Rishabh Mehandru, Tahir Ghani |
2023-06-27 |
| 11676965 |
Strained tunable nanowire structures and process |
Tahir Ghani, Anand S. Murthy, Biswajeet Guha |
2023-06-13 |
| 11658183 |
Metallization structures under a semiconductor device layer |
Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow |
2023-05-23 |
| 11600696 |
Sub-fin leakage reduction for template strained materials |
Rishabh Mehandru, Anupama Bowonder, Juhyung Nam, Willy Rachmady |
2023-03-07 |
| 11581406 |
Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer |
Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more |
2023-02-14 |
| 11557676 |
Device, method and system to provide a stressed channel of a transistor |
Rishabh Mehandru, Tahir Ghani, Anand S. Murthy |
2023-01-17 |
| 11552197 |
Nanowire structures having non-discrete source and drain regions |
Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn |
2023-01-10 |
