Issued Patents 2023
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11843052 | Transistor contact area enhancement | Rishabh Mehandru, Tahir Ghani | 2023-12-12 |
| 11824107 | Wrap-around contact structures for semiconductor nanowires and nanoribbons | Rishabh Mehandru, Tahir Ghani, Biswajeet Guha | 2023-11-21 |
| 11757026 | Nanowire structures having wrap-around contacts | Cory E. Weber, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar | 2023-09-12 |
| 11705518 | Isolation schemes for gate-all-around transistor devices | Rishabh Mehandru, Biswajeet Guha, Tahir Ghani, William Hsu | 2023-07-18 |
| 11688780 | Deep source and drain for transistor structures with back-side contact metallization | Rishabh Mehandru, Tahir Ghani | 2023-06-27 |
| 11676965 | Strained tunable nanowire structures and process | Tahir Ghani, Anand S. Murthy, Biswajeet Guha | 2023-06-13 |
| 11658183 | Metallization structures under a semiconductor device layer | Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow | 2023-05-23 |
| 11600696 | Sub-fin leakage reduction for template strained materials | Rishabh Mehandru, Anupama Bowonder, Juhyung Nam, Willy Rachmady | 2023-03-07 |
| 11581406 | Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer | Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more | 2023-02-14 |
| 11557676 | Device, method and system to provide a stressed channel of a transistor | Rishabh Mehandru, Tahir Ghani, Anand S. Murthy | 2023-01-17 |
| 11552197 | Nanowire structures having non-discrete source and drain regions | Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn | 2023-01-10 |