Issued Patents 2023
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11804523 | High aspect ratio source or drain structures with abrupt dopant profile | Ryan Keech, Nicholas G. Minutillo, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more | 2023-10-31 |
| 11784239 | Subfin leakage suppression using fixed charge | Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady +5 more | 2023-10-10 |
| 11769836 | Gate-all-around integrated circuit structures having nanowires with tight vertical spacing | Glenn A. Glass, Biswajeet Guha, Tahir Ghani, Susmita Ghose, Zachary Geiger | 2023-09-26 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Willy Rachmady, Gilbert Dewey +4 more | 2023-09-19 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Harold W. Kennel, Gilbert Dewey +4 more | 2023-09-12 |
| 11757037 | Epitaxial oxide plug for strained transistors | Karthik Jambunathan, Biswajeet Guha, Anupama Bowonder, Tahir Ghani | 2023-09-12 |
| 11757004 | Transistors including source/drain employing double-charge dopants | Glenn A. Glass, Tahir Ghani | 2023-09-12 |
| 11742346 | Interconnect techniques for electrically connecting source/drain regions of stacked transistors | Aaron D. Lilak, Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach +4 more | 2023-08-29 |
| 11735670 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors | Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2023-08-22 |
| 11735630 | Integrated circuit structures with source or drain dopant diffusion blocking layers | Cory Bomberger, Anupama Bowonder, Aaron A. Budrevich, Tahir Ghani | 2023-08-22 |
| 11699756 | Source/drain diffusion barrier for germanium nMOS transistors | Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2023-07-11 |
| 11695081 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros +4 more | 2023-07-04 |
| 11682731 | Fin smoothing and integrated circuit structures resulting therefrom | Cory Bomberger, Tahir Ghani, Anupama Bowonder | 2023-06-20 |
| 11676965 | Strained tunable nanowire structures and process | Stephen M. Cea, Tahir Ghani, Biswajeet Guha | 2023-06-13 |
| 11670682 | FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Tahir Ghani +2 more | 2023-06-06 |
| 11631737 | Ingaas epi structure and wet etch process for enabling III-v GAA in art trench | Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +4 more | 2023-04-18 |
| 11621325 | Source or drain structures with low resistivity | Cory Bomberger, Suresh Vishwanath | 2023-04-04 |
| 11610995 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra | 2023-03-21 |
| 11610889 | Arsenic-doped epitaxial, source/drain regions for NMOS | Ryan Keech, Nicholas G. Minutillo, Ritesh Jhaveri | 2023-03-21 |
| 11588017 | Nanowire for transistor integration | Glenn A. Glass, Chandra S. Mohapatra, Karthik Jambunathan | 2023-02-21 |
| 11581406 | Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Kelin J. Kuhn +1 more | 2023-02-14 |
| 11575005 | Asymmetrical semiconductor nanowire field-effect transistor | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Benjamin Chu-Kung, Siddharth Chouksey +3 more | 2023-02-07 |
| 11557658 | Transistors with high density channel semiconductor over dielectric material | Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more | 2023-01-17 |
| 11557676 | Device, method and system to provide a stressed channel of a transistor | Rishabh Mehandru, Stephen M. Cea, Tahir Ghani | 2023-01-17 |
| 11552169 | Source or drain structures with phosphorous and arsenic co-dopants | Ryan Keech, Nicholas G. Minutillo, Suresh Vishwanath | 2023-01-10 |