Issued Patents 2023
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11646352 | Stacked source-drain-gate connection and process for forming such | Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +2 more | 2023-05-09 |
| 11640961 | III-V source/drain in top NMOS transistors for low temperature stacked transistor contacts | Ravi Pillarisetty, Jack T. Kavalieros, Aaron D. Lilak, Willy Rachmady, Rishabh Mehandru +6 more | 2023-05-02 |
| 11631737 | Ingaas epi structure and wet etch process for enabling III-v GAA in art trench | Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Chandra S. Mohapatra +4 more | 2023-04-18 |
| 11626519 | Fabrication of non-planar IGZO devices for improved electrostatics | Van H. Le, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic, Kent Millard +4 more | 2023-04-11 |
| 11616060 | Techniques for forming gate structures for transistors arranged in a stacked configuration on a single fin structure | Aaron D. Lilak, Willy Rachmady, Rami Hourani, Stephanie A. Bojarski, Rishabh Mehandru +2 more | 2023-03-28 |
| 11616056 | Vertical diode in stacked transistor architecture | Aaron D. Lilak, Patrick Morrow, Anh Phan, Cheng-Ying Huang, Rishabh Mehandru +1 more | 2023-03-28 |
| 11605565 | Three dimensional integrated circuits with stacked transistors | Cheng-Ying Huang, Willy Rachmady, Aaron D. Lilak, Kimin Jun, Brennen Mueller +5 more | 2023-03-14 |
| 11594533 | Stacked trigate transistors with dielectric isolation between first and second semiconductor fins | Willy Rachmady, Cheng-Ying Huang, Aaron D. Lilak, Patrick Morrow, Anh Phan +2 more | 2023-02-28 |
| 11588102 | Semiconductor material for resistive random access memory | Abhishek A. Sharma, Van H. Le, Rafael Rios, Jack T. Kavalieros, Shriram Shivaraman | 2023-02-21 |
| 11573798 | Stacked transistors with different gate lengths in different device strata | Aaron D. Lilak, Willy Rachmady, Rishabh Mehandru, Ehren Mannebach, Cheng-Ying Huang +2 more | 2023-02-07 |
| 11569238 | Vertical memory cells | Aaron D. Lilak, Willy Rachmady, Kimin Jun, Hui Jae Yoo, Patrick Morrow +5 more | 2023-01-31 |
| 11569243 | Stacked-substrate DRAM semiconductor devices | Abhishek A. Sharma, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2023-01-31 |
| 11563119 | Etchstop regions in fins of semiconductor devices | Cheng-Ying Huang, Willy Rachmady, Erica J. Thompson, Aaron D. Lilak, Jack T. Kavalieros | 2023-01-24 |
| 11557658 | Transistors with high density channel semiconductor over dielectric material | Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang, Anand S. Murthy +3 more | 2023-01-17 |
| 11552104 | Stacked transistors with dielectric between channels of different device strata | Aaron D. Lilak, Willy Rachmady, Rishabh Mehandru, Ehren Mannebach, Cheng-Ying Huang +3 more | 2023-01-10 |