| 11830933 |
Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach |
Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros, Aaron D. Lilak, Patrick Morrow +2 more |
2023-11-28 |
$31,872,000 |
| 11776898 |
Sidewall interconnect metallization structures for integrated circuit devices |
Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Patrick Morrow |
2023-10-03 |
$24,984,000 |
| 11764263 |
Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches |
Ehren Mannebach, Aaron D. Lilak, Willy Rachmady, Gilbert Dewey, Cheng-Ying Huang +3 more |
2023-09-19 |
$20,015,000 |
| 11764104 |
Forming an oxide volume within a fin |
Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Aaron D. Lilak, Ehren Mannebach +3 more |
2023-09-19 |
$20,015,000 |
| 11742346 |
Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
Aaron D. Lilak, Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach +4 more |
2023-08-29 |
$19,273,000 |
| 11699637 |
Vertically stacked transistor devices with isolation wall structures containing an electrical conductor |
Aaron D. Lilak, Patrick Morrow, Stephanie A. Bojarski |
2023-07-11 |
$21,736,000 |
| 11676966 |
Stacked transistors having device strata with different channel widths |
Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz +4 more |
2023-06-13 |
$22,204,000 |
| 11646352 |
Stacked source-drain-gate connection and process for forming such |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Willy Rachmady +2 more |
2023-05-09 |
$19,706,000 |
| 11640961 |
III-V source/drain in top NMOS transistors for low temperature stacked transistor contacts |
Gilbert Dewey, Ravi Pillarisetty, Jack T. Kavalieros, Aaron D. Lilak, Willy Rachmady +6 more |
2023-05-02 |
$21,235,000 |
| 11616060 |
Techniques for forming gate structures for transistors arranged in a stacked configuration on a single fin structure |
Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Rami Hourani, Stephanie A. Bojarski +2 more |
2023-03-28 |
$20,940,000 |
| 11616056 |
Vertical diode in stacked transistor architecture |
Aaron D. Lilak, Patrick Morrow, Cheng-Ying Huang, Rishabh Mehandru, Gilbert Dewey +1 more |
2023-03-28 |
$20,940,000 |
| 11605565 |
Three dimensional integrated circuits with stacked transistors |
Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Kimin Jun +5 more |
2023-03-14 |
$29,588,000 |
| 11594533 |
Stacked trigate transistors with dielectric isolation between first and second semiconductor fins |
Willy Rachmady, Cheng-Ying Huang, Gilbert Dewey, Aaron D. Lilak, Patrick Morrow +2 more |
2023-02-28 |
$10,430,000 |
| 11573798 |
Stacked transistors with different gate lengths in different device strata |
Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Rishabh Mehandru, Ehren Mannebach +2 more |
2023-02-07 |
$11,877,000 |
| 11552104 |
Stacked transistors with dielectric between channels of different device strata |
Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Rishabh Mehandru, Ehren Mannebach +3 more |
2023-01-10 |
$14,061,000 |
