| 11764282 |
Antiferroelectric gate dielectric transistors and their methods of fabrication |
Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Willy Rachmady, Jack T. Kavalieros +1 more |
2023-09-19 |
| 11735595 |
Thin film tunnel field effect transistors having relatively increased width |
Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov |
2023-08-22 |
| 11659722 |
Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit |
Willy Rachmady, Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Anup Pancholi +1 more |
2023-05-23 |
| 11640839 |
1S-1T ferroelectric memory |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov |
2023-05-02 |
| 11640995 |
Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer |
Brian S. Doyle, Kevin P. O'Brien, Abhishek A. Sharma, Elijah V. Karpov, Kaan Oguz |
2023-05-02 |
| 11631717 |
3D memory array with memory cells having a 3D selector and a storage component |
Charles C. Kuo, Abhishek A. Sharma, Willy Rachmady |
2023-04-18 |
| 11626437 |
Integration of metasurface lens on wafer level substrate |
Kunjal Parikh, Jack T. Kavalieros |
2023-04-11 |
| 11616057 |
IC including back-end-of-line (BEOL) transistors with crystalline channel material |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Willy Rachmady |
2023-03-28 |
| 11605671 |
Double selector element for low voltage bipolar memory devices |
Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma |
2023-03-14 |