RW

Robert Wu

Applied Materials: 24 patents #504 of 7,310Top 7%
AE Advanced Micro-Fabrication Equipment: 1 patents #26 of 61Top 45%
HP HP: 1 patents #3,612 of 7,018Top 55%
Overall (All Time): #139,803 of 4,157,543Top 4%
28
Patents All Time

Issued Patents All Time

Showing 25 most recent of 28 patents

Patent #TitleCo-InventorsDate
7992518 Silicon carbide gas distribution plate and RF electrode for plasma etch chamber Tuqiang Ni 2011-08-09
6800213 Precision dielectric etch using hexafluorobutadiene Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more 2004-10-05
6776873 Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers Jennifer Y. Sun, Shun Wu, Senh Thach, Ananda H. Kumar, Hong Wang +2 more 2004-08-17
6513452 Adjusting DC bias voltage in plasma chamber Hongching Shan, Evans Lee, Michael Welch, Bryan Pu, Paul Luscher +2 more 2003-02-04
6454898 Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners Kenneth S. Collins, Michael R. Rice, Douglas A. Buchberger, Jr., Craig A. Roderick, Eric Askarinam +5 more 2002-09-24
6432318 Dielectric etch process reducing striations and maintaining critical dimensions Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more 2002-08-13
6379574 Integrated post-etch treatment for a dielectric etch process Hui Ou-Yang, Chih-Ping Yang, Lin-Xiu Ye, Chih-Pang Chen, You-Neng Cheng +2 more 2002-04-30
6361705 Plasma process for selectively etching oxide using fluoropropane or fluoropropylene Ruiping Wang, Gerald Yin, Hao Lu, Jian Ding 2002-03-26
6308654 Inductively coupled parallel-plate plasma reactor with a conical dome Gerhard Schneider, Viktor Shel, Andrew Nguyen, Gerald Yin 2001-10-30
6221782 Adjusting DC bias voltage in plasma chamber Hongching Shan, Evans Lee, Michael Welch, Bryan Pu, Paul Luscher +2 more 2001-04-24
6183655 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon Ruiping Wang, Gerald Yin, Jian Ding 2001-02-06
6074512 Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners Kenneth S. Collins, Michael R. Rice, Douglas A. Buchberger, Jr., Craig A. Roderick, Eric Askarinam +5 more 2000-06-13
6074959 Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide Ruiping Wang, Gerald Yin, Jian Ding 2000-06-13
6009830 Independent gas feeds in a plasma reactor Haojiang Li 2000-01-04
5986875 Puncture resistant electrostatic chuck Arik Donde, Hyman J. Levinstein, Andreas Hegedus, Edwin C. Weldon, Shamouil Shamouilian +2 more 1999-11-16
5965463 Silane etching process Chunshi Cui, Gerald Yin 1999-10-12
5910221 Bonded silicon carbide parts in a plasma reactor 1999-06-08
5904778 Silicon carbide composite article particularly useful for plasma reactors Hao Lu, Nianci Han, Gerald Yin 1999-05-18
5891350 Adjusting DC bias voltage in plasma chambers Hong Ching Shan, Evans Lee, Michael Welch, Bryan Pu, Paul Luscher +2 more 1999-04-06
5865937 Broad-band adjustable power ratio phase-inverting plasma reactor Hongching Shan, Hiroji Hanawa, Michael Welch 1999-02-02
5729423 Puncture resistant electrostatic chuck Arik Donde, Hyman J. Levinstein, Andreas Hegedus, Edwin C. Weldon, Shamouil Shamouilian +2 more 1998-03-17
5607542 Inductively enhanced reactive ion etching Gerald Yin 1997-03-04
5605637 Adjustable dc bias control in a plasma reactor Hongching Shan, Evans Lee 1997-02-25
5585012 Self-cleaning polymer-free top electrode for parallel electrode etch operation Hyman J. Levinstein, Hongching Shan 1996-12-17
5560780 Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same Jian Ding 1996-10-01