Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12195846 | Modified stacks for 3D NAND | Xinhai Han, Hang Yu, Kesong Hu, Kristopher Enslow, Masaki Ogata +9 more | 2025-01-14 |
| 11898249 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2024-02-13 |
| 11894228 | Treatments for controlling deposition defects | Sudha Rathi, Ganesh Balasubramanian, Abdul Aziz Khaja, Prashanthi Para, Hiral D. Tailor | 2024-02-06 |
| 11613812 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2023-03-28 |
| 10793954 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2020-10-06 |
| 10475644 | Dielectric-metal stack for 3D flash memory application | Xinhai Han, Sung Hyun Hong, Bok Hoen Kim, Mukund Srinivasan | 2019-11-12 |
| 10060032 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2018-08-28 |
| 10030306 | PECVD apparatus and process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2018-07-24 |
| 9972487 | Dielectric-metal stack for 3D flash memory application | Xinhai Han, Sung Hyun Hong, Bok Hoen Kim, Mukund Srinivasan | 2018-05-15 |
| 9896326 | FCVD line bending resolution by deposition modulation | Jingmei Liang, Kiran V. Thadani, Jessica S. Kachian | 2018-02-20 |
| 9816187 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2017-11-14 |
| 9490116 | Gate stack materials for semiconductor applications for lithographic overlay improvement | Michael Wenyoung Tsiang, Praket P. Jha, Xinhai Han, Bok Hoen Kim, Tsutomu Kiyohara +1 more | 2016-11-08 |
| 9458537 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2016-10-04 |
| 9157730 | PECVD process | Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez +17 more | 2015-10-13 |
| 8563095 | Silicon nitride passivation layer for covering high aspect ratio features | Xinhai Han, Ryan Yamase, Ji Ae Park, Shamik Patel, Thomas Nowak +5 more | 2013-10-22 |
| 8329575 | Fabrication of through-silicon vias on silicon wafers | Ji Ae Park, Ryan Yamase, Shamik Patel, Thomas Nowak, Li-Qun Xia +5 more | 2012-12-11 |
| 8298887 | High mobility monolithic p-i-n diodes | Xinhai Han, Ji Ae Park, Bencherki Mebarki, Heung Lak Park, Bok Hoen Kim | 2012-10-30 |
| 8283237 | Fabrication of through-silicon vias on silicon wafers | Ji Ae Park, Ryan Yamase, Shamik Patel, Thomas Nowak, Li-Qun Xia +5 more | 2012-10-09 |
| 8076250 | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application | Xinhai Han, Ji Ae Park, Tsutomu Kiyohara, Sohyun Park, Bok Hoen Kim | 2011-12-13 |
| 7947611 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | Dustin W. Ho, Juan Carlos Rocha-Alvarez, Alexandros T. Demos, Kelvin Chan, Visweswaren Sivaramakrishnan | 2011-05-24 |
| 7723228 | Reduction of hillocks prior to dielectric barrier deposition in Cu damascene | Meiyee Shek, Kegang Huang, Bok Hoen Kim, Hichem M'Saad, Thomas Nowak | 2010-05-25 |
| 7410916 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | Dustin W. Ho, Juan Carlos Rocha-Alvarez, Alexandros T. Demos, Kelvin Chan, Visweswaren Sivaramakrishnan | 2008-08-12 |
| 7371427 | Reduction of hillocks prior to dielectric barrier deposition in Cu damascene | Meiyee Shek, Kegang Huang, Bok Hoen Kim, Hichem M'Saad, Thomas Nowak | 2008-05-13 |
| 7297376 | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers | Kang Sub Yim, Kelvin Chan, Josephine Ju-Hwei Chang Liu, Sang-Hoon Ahn, Yi Zheng +3 more | 2007-11-20 |
| 7229911 | Adhesion improvement for low k dielectrics to conductive materials | Meiyee Shek, Albert Lee, Annamalai Lakshmanan, Li-Qun Xia, Zhenjiang Cui | 2007-06-12 |