Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12281387 | Method of depositing metal films | Feng Q. Liu, Mark Saly, David Thompson, Avgerinos V. Gelatos, Joung Joo Lee | 2025-04-22 |
| 12104243 | Methods and apparatus for processing a substrate | Jacqueline S. Wrench, Feihu Wang, Yixiong Yang, Joung Joo Lee, Srinivas Gandikota +3 more | 2024-10-01 |
| 12022650 | Low resistivity DRAM buried word line stack | Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Joung Joo Lee +2 more | 2024-06-25 |
| 11587936 | Low resistivity DRAM buried word line stack | Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Joung Joo Lee +2 more | 2023-02-21 |
| 11587829 | Doping control of metal nitride films | Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma | 2023-02-21 |
| 10930472 | Methods for forming a metal silicide interconnection nanowire structure | Bencherki Mebarki, Kaushal K. Singh, Andrew Cockburn, Ludovic Godet, Paul F. Ma +1 more | 2021-02-23 |
| 10910263 | Doping control of metal nitride films | Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma | 2021-02-02 |
| 10784157 | Doped tantalum nitride for copper barrier applications | Paul F. Ma, Mei Chang, Jennifer Shan | 2020-09-22 |
| 10593592 | Laminate and core shell formation of silicide nanowire | Bencherki Mebarki, Kaushal K. Singh, Paul F. Ma, Mehul Naik, Andrew Cockburn +1 more | 2020-03-17 |
| 10431493 | Doping control of metal nitride films | Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma | 2019-10-01 |
| 10204764 | Methods for forming a metal silicide interconnection nanowire structure | Bencherki Mebarki, Kaushal K. Singh, Andrew Cockburn, Ludovic Godet, Paul F. Ma +1 more | 2019-02-12 |
| 10008412 | Doping control of metal nitride films | Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma | 2018-06-26 |
| 9659814 | Doping control of metal nitride films | Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma | 2017-05-23 |
| 9613859 | Direct deposition of nickel silicide nanowire | Bencherki Mebarki, Kaushal K. Singh, Paul F. Ma, Mehul Naik, Andrew Cockburn +1 more | 2017-04-04 |
| 9466524 | Method of depositing metals using high frequency plasma | Paul F. Ma, Guojun Liu, Dien-Yeh Wu, Anantha K. Subramani | 2016-10-11 |
| 9157151 | Elimination of first wafer effect for PECVD films | Ganesh Balasubramanian, Francimar Schmitt, Bok Hoen Kim | 2015-10-13 |
| 9076661 | Methods for manganese nitride integration | Paul F. Ma, Jennifer Meng Chu Tseng, Mei Chang, Jing Tang | 2015-07-07 |
| 8642376 | Methods for depositing a material atop a substrate | Sukti Chatterjee, Joe Griffith Cruz, Pravin K. Narwankar | 2014-02-04 |
| 7288205 | Hermetic low dielectric constant layer for barrier applications | Albert Lee, Ju-Hyung Lee, Bok Hoen Kim | 2007-10-30 |
| 7273823 | Situ oxide cap layer development | Daemian Raj, Francimar Schmitt, Bok Hoen Kim, Ganesh Balasubramanian | 2007-09-25 |
| 7259111 | Interface engineering to improve adhesion between low k stacks | Deenesh Padhi, Ganesh Balasubramanian, Zhenjiang Cui, Juan Carlos Rocha-Alvarez, Bok Hoen Kim +3 more | 2007-08-21 |
| 7229911 | Adhesion improvement for low k dielectrics to conductive materials | Nagarajan Rajagopalan, Meiyee Shek, Albert Lee, Li-Qun Xia, Zhenjiang Cui | 2007-06-12 |
| 7189658 | Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile | Deenesh Padhi, Ganesh Balasubramanian, Zhenjiang Cui, Daemian Raj, Juan Carlos Rocha-Alvarez +2 more | 2007-03-13 |
| 7091137 | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications | Albert Lee, Bok Hoen Kim, Li-Qun Xia, Mei-Yee Shek Le | 2006-08-15 |
| 6923189 | Cleaning of CVD chambers using remote source with cxfyoz based chemistry | Ju-Hyung Lee, Troy Kim, Maosheng Zhao, Shankar Venkataraman | 2005-08-02 |