KC

Kangguo Cheng

IBM: 2575 patents #1 of 70,183Top 1%
Globalfoundries: 269 patents #3 of 4,424Top 1%
TE Tessera: 34 patents #14 of 271Top 6%
SS Stmicroelectronics Sa: 19 patents #57 of 1,676Top 4%
AS Adeia Semiconductor Solutions: 13 patents #1 of 57Top 2%
ET Elpis Technologies: 12 patents #1 of 121Top 1%
CEA: 6 patents #716 of 7,956Top 9%
GU Globalfoundries U.S.: 5 patents #206 of 665Top 35%
Samsung: 5 patents #22,466 of 75,807Top 30%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
IB International Business: 1 patents #4 of 119Top 4%
📍 Schenectady, NY: #1 of 1,353 inventorsTop 1%
🗺 New York: #1 of 115,490 inventorsTop 1%
Overall (All Time): #5 of 4,157,543Top 1%
2819
Patents All Time

Issued Patents All Time

Showing 1,076–1,100 of 2,819 patents

Patent #TitleCo-InventorsDate
10283565 Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element Peng Xu, Juntao Li, Choonghyun Lee 2019-05-07
10283504 Vertical FET with reduced parasitic capacitance Xin Miao, Philip J. Oldiges, Wenyu Xu, Chen Zhang 2019-05-07
10283406 Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang 2019-05-07
10276659 Air gap adjacent a bottom source/drain region of vertical transistor device Ruilong Xie, Chun-Chen Yeh, Tenko Yamashita 2019-04-30
10276658 FinFET devices Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang 2019-04-30
10276569 Minimizing shorting between FinFET epitaxial regions Balasubramanian Pranatharthiharan, Alexander Reznicek, Charan V. Surisetty 2019-04-30
10276442 Wrap-around contacts formed with multiple silicide layers Ruilong Xie, Julien Frougier, Adra Carr, Nicolas Loubet 2019-04-30
10269983 Stacked nanosheet field-effect transistor with air gap spacers Julien Frougier, Ruilong Xie, Hui Zang, Tenko Yamashita, Chun-Chen Yeh 2019-04-23
10269931 Vertical transport field effect transistor with precise gate length definition Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan 2019-04-23
10269920 Nanosheet transistors having thin and thick gate dielectric material Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh 2019-04-23
10269790 Forming horizontal bipolar junction transistor compatible with nanosheets Juntao Li, Geng Wang, Qintao Zhang 2019-04-23
10269644 Fin pitch scaling for high voltage devices and low voltage devices on the same wafer Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang 2019-04-23
10263100 Buffer regions for blocking unwanted diffusion in nanosheet transistors Zhenxing Bi, Juntao Li, Peng Xu 2019-04-16
10263075 Nanosheet CMOS transistors Zhenxing Bi, Juntao Li, Peng Xu 2019-04-16
10263014 Fin-type field-effect transistor 2019-04-16
10262991 Distributed decoupling capacitor Ali Khakifirooz, Darsen D. Lu, Ghavam G. Shahidi 2019-04-16
10262905 Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet, Scott Luning 2019-04-16
10262901 Fabrication of a vertical fin field effect transistor with reduced dimensional variations 2019-04-16
10262900 Wimpy device by selective laser annealing Nicolas Loubet, Xin Miao, Alexander Reznicek 2019-04-16
10262890 Method of forming silicon hardmask Peng Xu 2019-04-16
10262861 Forming a fin cut in a hardmask Zhenxing Bi, Juntao Li, Peng Xu 2019-04-16
10256328 Dummy dielectric fins for finFETs with silicon and silicon germanium channels Xin Miao, Wenyu Xu, Chen Zhang 2019-04-09
10256326 Forming stacked nanowire semiconductor device Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more 2019-04-09
10256321 Semiconductor device including enhanced low-k spacer Zuoguang Liu, Chun Wing Yeung 2019-04-09
10256316 Steep-switch field effect transistor with integrated bi-stable resistive system Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh 2019-04-09