Issued Patents All Time
Showing 101–125 of 212 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6657268 | Metal gate stack with etch stop layer having implanted metal species | Srikanteswara Dakshina-Murthy | 2003-12-02 |
| 6656836 | Method of performing a two stage anneal in the formation of an alloy interconnect | Pin-Chin Connie Wang | 2003-12-02 |
| 6656834 | Method of selectively alloying interconnect regions by deposition process | Larry Zhao | 2003-12-02 |
| 6642590 | Metal gate with PVD amorphous silicon layer and barrier layer for CMOS devices and method of making with a replacement gate process | Qi Xiang, Matthew S. Buynoski | 2003-11-04 |
| 6633085 | Method of selectively alloying interconnect regions by ion implantation | Larry Zhao, Donggang D. Wu | 2003-10-14 |
| 6629879 | Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements | Susan Kim | 2003-10-07 |
| 6617176 | METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING METALLIZATION DIFFUSION BY FORMING A TEST SPECIMEN DEVICE AND USING A METAL PENETRATION MEASUREMENT TECHNIQUE FOR FABRICATING A PRODUCTION SEMICONDUCTOR DEVICE AND A TEST SPECIMEN DEVICE THEREBY FORMED | John Sanchez, Pin-Chin Connie Wang, Christy Mei-Chu Woo | 2003-09-09 |
| 6614064 | Transistor having a gate stick comprised of a metal, and a method of making same | William S. Brennan | 2003-09-02 |
| 6611576 | Automated control of metal thickness during film deposition | Paul L. King | 2003-08-26 |
| 6610594 | Locally increasing sidewall density by ion implantation | Eric M. Apelgren, Christian Zistl, Jeremy I. Martin, Fred Cheung | 2003-08-26 |
| 6610181 | Method of controlling the formation of metal layers | Paul L. King, Susan Kim | 2003-08-26 |
| 6605513 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Eric N. Paton, Ercan Adem, Jacques Bertrand, Matthew S. Buynoski, John Foster +4 more | 2003-08-12 |
| 6602754 | Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer | George Jonathan Kluth, Minh Van Ngo | 2003-08-05 |
| 6602781 | Metal silicide gate transistors | Qi Xiang, Matthew S. Buynoski, John Foster, Paul L. King, Eric N. Paton | 2003-08-05 |
| 6589408 | Non-planar copper alloy target for plasma vapor deposition systems | Pin-Chin Connie Wang, Sergey Lopatin, Minh Quoc Tran | 2003-07-08 |
| 6589858 | Method of making metal gate stack with etch endpoint tracer layer | Srikanteswara Dakshina-Murthy | 2003-07-08 |
| 6589866 | Metal gate with PVD amorphous silicon layer having implanted dopants for CMOS devices and method of making with a replacement gate process | Qi Xiang, Matthew S. Buynoski | 2003-07-08 |
| 6583012 | Semiconductor devices utilizing differently composed metal-based in-laid gate electrodes | Matthew S. Buynoski, Qi Xiang | 2003-06-24 |
| 6566252 | Method for simultaneous deposition and sputtering of TEOS and device thereby formed | Minh Van Ngo | 2003-05-20 |
| 6562718 | Process for forming fully silicided gates | Qi Xiang, Ercan Adem, Jacques Bertrand, Matthew S. Buynoski, John Foster +5 more | 2003-05-13 |
| 6559051 | Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul L. King, Eric N. Paton, Qi Xang | 2003-05-06 |
| 6555479 | Method for forming openings for conductive interconnects | Frederick N. Hause, Frank Mauersberger, Errol Todd Ryan, William S. Brennan, John A. Iacoponi +1 more | 2003-04-29 |
| 6545370 | Composite silicon nitride sidewall spacers for reduced nickel silicide bridging | Minh Van Ngo, Christy Mei-Chu Woo | 2003-04-08 |
| 6534869 | Method for reducing stress-induced voids for 0.25 &mgr;m micron and smaller semiconductor chip technology by annealing interconnect lines prior to ILD deposition and semiconductor chip made thereby | Bryan Tracy, Minh Van Ngo | 2003-03-18 |
| 6528362 | Metal gate with CVD amorphous silicon layer for CMOS devices and method of making with a replacement gate process | Qi Xiang, Matthew S. Buynoski | 2003-03-04 |