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Fei Wang

AM AMD: 137 patents #14 of 9,279Top 1%
The Procter & Gamble: 38 patents #204 of 10,133Top 3%
Applied Materials: 15 patents #903 of 7,310Top 15%
SL Spansion Llc.: 10 patents #91 of 769Top 15%
SC Saint-Gobain Adfors Canada: 4 patents #4 of 45Top 9%
AB Asm Ip Holding B.V.: 4 patents #202 of 620Top 35%
KT Kunming University Of Science And Technology: 4 patents #12 of 279Top 5%
WARF: 3 patents #656 of 4,123Top 20%
MR Monterey Research: 2 patents #7 of 54Top 15%
Becton, Dickinson And: 2 patents #1,271 of 2,926Top 45%
Fujitsu Limited: 2 patents #10,930 of 24,456Top 45%
SP Saint-Gobain Performance Plastics: 2 patents #139 of 490Top 30%
SI Sipix Imaging: 2 patents #46 of 91Top 55%
IN International: 1 patents #41 of 85Top 50%
JH J.M. Huber: 1 patents #107 of 207Top 55%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
A( Alltop Electronics (Suzhou): 1 patents #33 of 63Top 55%
NC Ningbo Crrc Times Transducer Technology Co.: 1 patents #8 of 15Top 55%
QT Qingdao University Of Technology: 1 patents #168 of 480Top 35%
SA Saint-Gobain Abrasifs: 1 patents #184 of 340Top 55%
SA Saint-Gobain Abrasives: 1 patents #204 of 367Top 60%
FL Fujitsu Amd Semiconductor Limited: 1 patents #14 of 40Top 35%
Cypress Semiconductor: 1 patents #1,072 of 1,852Top 60%
SC Shanghai Huachang Environmental Protection Co.: 1 patents #16 of 45Top 40%
SU Sichuan University: 1 patents #191 of 663Top 30%
Caltech: 1 patents #2,143 of 4,321Top 50%
EM Embecta: 1 patents #37 of 76Top 50%
University Of Texas System: 1 patents #2,951 of 6,559Top 45%
Infineon Technologies Ag: 1 patents #4,439 of 7,486Top 60%
📍 Mason, OH: #3 of 1,011 inventorsTop 1%
🗺 Ohio: #24 of 73,341 inventorsTop 1%
Overall (All Time): #2,214 of 4,157,543Top 1%
240
Patents All Time

Issued Patents All Time

Showing 201–225 of 240 patents

Patent #TitleCo-InventorsDate
6242305 Process for fabricating a bit-line using buried diffusion isolation David K. Foote, Hideki Komori, Bharath Rangarajan 2001-06-05
6235628 Method of forming dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide middle etch stop layer Jerry Cheng 2001-05-22
6211071 Optimized trench/via profile for damascene filling Todd P. Lukanc, Steven C. Avanzino 2001-04-03
6207502 Method of using source/drain nitride for periphery field oxide and bit-line oxide Kenneth Wo-Wai Au, David K. Foote, Steven K. Park, Bharath Rangarajan 2001-03-27
6207576 Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide etch stop layer Jerry Cheng 2001-03-27
6207577 Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layer Jerry Cheng, Darrell M. Erb 2001-03-27
6200907 Ultra-thin resist and barrier metal/oxide hard mask for metal etch Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson, Chih-Yuh Yang 2001-03-13
6184128 Method using a thin resist mask for dual damascene stop layer etch Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson, Chih-Yuh Yang 2001-02-06
6171763 Ultra-thin resist and oxide/nitride hard mask for metal etch Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson, Chih-Yuh Yang 2001-01-09
6168993 Process for fabricating a semiconductor device having a graded junction David K. Foote, Bharath Rangarajan, George J. Kluth 2001-01-02
6165695 Thin resist with amorphous silicon hard mask for via etch application Chih-Yuh Yang, Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Scott A. Bell 2000-12-26
6162587 Thin resist with transition metal hard mask for via etch application Chih-Yuh Yang, Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Scott A. Bell 2000-12-19
6156658 Ultra-thin resist and silicon/oxide hard mask for metal etch Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson, Chih-Yuh Yang 2000-12-05
6156643 Method of forming a dual damascene trench and borderless via structure Simon S. Chan, Todd P. Lukanc 2000-12-05
6153514 Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer Jerry Cheng, Todd P. Lukanc 2000-11-28
6140023 Method for transferring patterns created by lithography Harry J. Levinson, Scott A. Bell, Christopher F. Lyons, Khanh B. Nguyen, Chih-Yuh Yang 2000-10-31
6140706 Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern utilizing multiple dielectric layers Simon S. Chan, Susan H. Chen 2000-10-31
6127070 Thin resist with nitride hard mask for via etch application Chih-Yuh Yang, Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Scott A. Bell 2000-10-03
6124201 Method for manufacturing semiconductors with self-aligning vias Robin Cheung, Mark S. Chang, Richard J. Huang, Angela T. Hui 2000-09-26
6121663 Local interconnects for improved alignment tolerance and size reduction William G. En, Darin A. Chan, David K. Foote, Minh Van Ngo 2000-09-19
6121150 Sputter-resistant hardmask for damascene trench/via formation Steven C. Avanzino 2000-09-19
6121149 Optimized trench/via profile for damascene filling Todd P. Lukanc, Steven C. Avanzino 2000-09-19
6117781 Optimized trench/via profile for damascene processing Todd P. Lukanc, Steven C. Avanzino 2000-09-12
6117782 Optimized trench/via profile for damascene filling Todd P. Lukanc, Steven C. Avanzino 2000-09-12
6114235 Multipurpose cap layer dielectric David K. Foote, Minh Van Ngo, Christopher F. Lyons, Raymond T. Lee, William G. En +2 more 2000-09-05