Issued Patents All Time
Showing 226–240 of 240 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6107208 | Nitride etch using N.sub.2 /Ar/CHF.sub.3 chemistry | Jerry Cheng | 2000-08-22 |
| 6086777 | Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dry etch | Jerry Cheng | 2000-07-11 |
| 6060380 | Antireflective siliconoxynitride hardmask layer used during etching processes in integrated circuit fabrication | Ramkumar Subramanian, Bhanwar Singh, Simon S. Chan | 2000-05-09 |
| 6060328 | Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process | William G. En, Allison Holbrook | 2000-05-09 |
| 6057239 | Dual damascene process using sacrificial spin-on materials | Bhanwar Singh, James Kai | 2000-05-02 |
| 6054384 | Use of hard masks during etching of openings in integrated circuits for high etch selectivity | Susan H. Chen | 2000-04-25 |
| 6040619 | Semiconductor device including antireflective etch stop layer | David K. Foote, Myron R. Cagan, Subhash Gupta | 2000-03-21 |
| 6020269 | Ultra-thin resist and nitride/oxide hard mask for metal etch | Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson, Chih-Yuh Yang | 2000-02-01 |
| 5956610 | Method and system for providing electrical insulation for local interconnect in a logic circuit | William G. En, Sunil Mehta, Stewart Logie | 1999-09-21 |
| 5952246 | Nitride selective, anisotropic Cl.sub.2 /He etch process | Shyam Garg, Robert B. Rickart | 1999-09-14 |
| 5920796 | In-situ etch of BARC layer during formation of local interconnects | Allison Holbrook, James Kai | 1999-07-06 |
| 5907781 | Process for fabricating an integrated circuit with a self-aligned contact | Hung-Sheng Chen, Unsoon Kim, Yu Sun, Chi Chang, Mark T. Ramsbey +4 more | 1999-05-25 |
| 5895269 | Methods for preventing deleterious punch-through during local interconnect formation | Minh Van Ngo, Darin A. Chan, David K. Foote, William G. En | 1999-04-20 |
| 5376573 | Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas | Robert B. Richart, Shyam Garg | 1994-12-27 |
| 5089585 | Transition metal bis(dithiolene) complex polymers | John R. Reynolds | 1992-02-18 |