SG

Shyam Garg

AM AMD: 14 patents #820 of 9,279Top 9%
IN Intel: 2 patents #13,213 of 30,777Top 45%
Overall (All Time): #302,886 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6140216 Post etch silicide formation using dielectric etchback after global planarization Robert B. Richart 2000-10-31
5989938 Method of fabricating topside structure of a semiconductor device Hsingya Arthur Wang, Bandali B. Mohamed, Bruce Lynn Pickelsimer 1999-11-23
5952246 Nitride selective, anisotropic Cl.sub.2 /He etch process Fei Wang, Robert B. Rickart 1999-09-14
5811334 Wafer cleaning procedure useful in the manufacture of a non-volatile memory device James F. Buller, Basab Bandyopadhyay, Nipendra J. Patel, Thomas E. Spikes, Jr. 1998-09-22
5774395 Electrically erasable reference cell for accurately determining threshold voltage of a non-volatile memory at a plurality of threshold voltage levels Robert B. Richart 1998-06-30
5728453 Method of fabricating topside structure of a semiconductor device Hsingya Arthur Wang, Mohamed B. Bandali, Bruce Lynn Pickelsimer 1998-03-17
5717632 Apparatus and method for multiple-level storage in non-volatile memories Robert B. Richart 1998-02-10
5632855 Thermal oxide etch technique Stephen Alister Jones 1997-05-27
5612253 Method for forming ordered titanium nitride and titanium silicide upon a semiconductor wafer using a three-step anneal process M. M. Farahani 1997-03-18
5581502 Method for reading a non-volatile memory array Robert B. Richart, Nipendra J. Patel 1996-12-03
5549786 Highly selective, highly uniform plasma etch process for spin-on glass Stephen Alister Jones, James F. Buller, Miguel Santana, Jr. 1996-08-27
5546340 Non-volatile memory array with over-erase correction Chung-You Hu, Robert B. Richart, Sanjay Banerjee 1996-08-13
5427963 Method of making a MOS device with drain side channel implant Robert B. Richart, Bradley T. Moore 1995-06-27
5376573 Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas Robert B. Richart, Fei Wang 1994-12-27
4536947 CMOS process for fabricating integrated circuits, particularly dynamic memory cells with storage capacitors Mark Bohr, Ken K. Yu, Leo D. Yau 1985-08-27
4505026 CMOS Process for fabricating integrated circuits, particularly dynamic memory cells Mark Bohr, Ken K. Yu, Leo D. Yau 1985-03-19