| 11205715 |
Self-aligned nanowire |
Mark Armstrong, Biswajeet Guha, Jun Sung Kang, Bruce Beattie |
2021-12-21 |
$33,282,000 |
| 11205707 |
Optimizing gate profile for performance and gate fill |
Nadia M. Rahhal-Orabi, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey +2 more |
2021-12-21 |
$33,282,000 |
| 11195919 |
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass +1 more |
2021-12-07 |
$28,128,000 |
| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Jack T. Kavalieros +3 more |
2021-11-30 |
$30,212,000 |
| 11189733 |
Thin-film transistors with low contact resistance |
Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic, Benjamin Chu-Kung +1 more |
2021-11-30 |
$30,212,000 |
| 11183594 |
Dual gate control for trench shaped thin film transistors |
Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros, Shriram Shivaraman +2 more |
2021-11-23 |
$33,627,000 |
| 11177255 |
Transistor structures having multiple threshold voltage channel materials |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel +3 more |
2021-11-16 |
$23,453,000 |
| 11171243 |
Transistor structures with a metal oxide contact buffer |
Gilbert Dewey, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Shriram Shivaraman +4 more |
2021-11-09 |
$28,241,000 |
| 11171207 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma +3 more |
2021-11-09 |
$28,241,000 |
| 11171058 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Glenn A. Glass, Daniel B. Aubertine, Anand S. Murthy, Gaurav Thareja |
2021-11-09 |
$28,241,000 |
| 11171057 |
Semiconductor fin design to mitigate fin collapse |
Glenn A. Glass, Chytra Pawashe, Anand S. Murthy, Daniel Pantuso |
2021-11-09 |
$28,241,000 |
| 11171240 |
Recessed thin-channel thin-film transistor |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Yih Wang |
2021-11-09 |
$28,241,000 |
| 11164790 |
Integrated nanowire and nanoribbon patterning in transistor manufacture |
Leonard P. GULER, Biswajeet Guha, Mark Armstrong, William Hsu |
2021-11-02 |
$26,002,000 |
| 11152461 |
Semiconductor layer between source/drain regions and gate spacers |
Rishabh Mehandru, Anupama Bowonder, Biswajeet Guha, Stephen M. Cea, William Hsu +2 more |
2021-10-19 |
$36,352,000 |
| 11152514 |
Multi-layer crystalline back gated thin film transistor |
Van H. Le, Abhishek A. Sharma, Gilbert Dewey, Kent Millard, Jack T. Kavalieros +6 more |
2021-10-19 |
$36,352,000 |
| 11139300 |
Three-dimensional memory arrays with layer selector transistors |
Wilfred Gomes, Mauro J. Kobrinsky, Abhishek A. Sharma, Rajesh Kumar, Kinyip Phoa +2 more |
2021-10-05 |
$23,463,000 |
| 11139241 |
Integrated circuit device with crenellated metal trace layout |
Patrick Morrow, Mauro J. Kobrinsky, Mark Bohr, Rishabh Mehandru, Ranjith Kumar |
2021-10-05 |
$23,463,000 |
| 11127841 |
Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions |
Szuya S. Liao, Michael L. Hattendorf |
2021-09-21 |
$30,488,000 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2021-09-14 |
$31,644,000 |
| 11121073 |
Through plate interconnect for a vertical MIM capacitor |
Travis W. Lajoie, Abhishek A. Sharma, Juan G. Alzate-Vinasco, Chieh-Jen Ku, Shem Ogadhoh +6 more |
2021-09-14 |
$31,644,000 |
| 11107890 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra +2 more |
2021-08-31 |
$22,590,000 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Jack T. Kavalieros +3 more |
2021-08-24 |
$32,164,000 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2021-08-24 |
$32,164,000 |
| 11101268 |
Transistors employing non-selective deposition of source/drain material |
Karthik Jambunathan, Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao +1 more |
2021-08-24 |
$32,164,000 |
| 11094785 |
Deuterium-based passivation of non-planar transistor interfaces |
Prashant Majhi, Glenn A. Glass, Anand S. Murthy, Aravind S. Killampalli, Mark R. Brazier +1 more |
2021-08-17 |
$29,127,000 |
