| 11205707 |
Optimizing gate profile for performance and gate fill |
Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +2 more |
2021-12-21 |
$33,282,000 |
| 11195924 |
Broken bandgap contact |
Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Willy Rachmady, Ashish Agrawal +1 more |
2021-12-07 |
$28,128,000 |
| 11177255 |
Transistor structures having multiple threshold voltage channel materials |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Harold W. Kennel, Cheng-Ying Huang +3 more |
2021-11-16 |
$23,453,000 |
| 11171207 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Nicholas G. Minutillo, Sean T. Ma, Anand S. Murthy +3 more |
2021-11-09 |
$28,241,000 |
| 11164747 |
Group III-V semiconductor devices having asymmetric source and drain structures |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang +3 more |
2021-11-02 |
$26,002,000 |
| 11164974 |
Channel layer formed in an art trench |
Willy Rachmady, Gilbert Dewey, Nancy Zelick, Harold W. Kennel, Nicholas G. Minutillo +1 more |
2021-11-02 |
$26,002,000 |
| 11152290 |
Wide bandgap group IV subfin to reduce leakage |
Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Jack T. Kavalieros, Ashish Agrawal +1 more |
2021-10-19 |
$36,352,000 |
| 11107890 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage |
Gilbert Dewey, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani +2 more |
2021-08-31 |
$22,590,000 |
| 11049773 |
Art trench spacers to enable fin release for non-lattice matched channels |
Gilbert Dewey, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani, Anand S. Murthy +4 more |
2021-06-29 |
$34,663,000 |
| 11031482 |
Gate electrode having a capping layer |
Gilbert Dewey, Mark L. Doczy, Suman Datta, Justin K. Brask |
2021-06-08 |
$26,946,000 |
| 11031499 |
Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current |
Willy Rachmady, Van H. Le, Benjamin Chu-Kung, Ashish Agrawal, Jack T. Kavalieros |
2021-06-08 |
$26,946,000 |
| 11017843 |
Thin film transistors for memory cell array layer selection |
Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady, Van H. Le, Jack T. Kavalieros |
2021-05-25 |
$32,857,000 |
| 10957769 |
High-mobility field effect transistors with wide bandgap fin cladding |
Sean T. Ma, Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Harold W. Kennel +3 more |
2021-03-23 |
$29,278,000 |
| 10937907 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2021-03-02 |
$34,569,000 |
| 10930766 |
Ge NANO wire transistor with GAAS as the sacrificial layer |
Willy Rachmady, Van H. Le, Jack T. Kavalieros, Sanaz K. Gardner |
2021-02-23 |
$31,062,000 |
| 10903364 |
Semiconductor device with released source and drain |
Willy Rachmady, Sanaz K. Gardner, Chandra S. Mohapatra, Gilbert Dewey, Sean T. Ma +3 more |
2021-01-26 |
$50,999,000 |
| 10892335 |
Device isolation by fixed charge |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber +5 more |
2021-01-12 |
$55,416,000 |
| 10886408 |
Group III-V material transistors employing nitride-based dopant diffusion barrier layer |
Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy +4 more |
2021-01-05 |
$27,050,000 |
