| 11205707 |
Optimizing gate profile for performance and gate fill |
Nadia M. Rahhal-Orabi, Tahir Ghani, Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey +2 more |
2021-12-21 |
$33,282,000 |
| 11195924 |
Broken bandgap contact |
Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Matthew V. Metz, Ashish Agrawal +1 more |
2021-12-07 |
$28,128,000 |
| 11177255 |
Transistor structures having multiple threshold voltage channel materials |
Sean T. Ma, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel, Cheng-Ying Huang +3 more |
2021-11-16 |
$23,453,000 |
| 11171207 |
Transistor with isolation below source and drain |
Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma, Anand S. Murthy +3 more |
2021-11-09 |
$28,241,000 |
| 11171233 |
Vertical field effect transistors (VFETs) with self-aligned wordlines |
Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Gilbert Dewey |
2021-11-09 |
$28,241,000 |
| 11164785 |
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material |
Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Anand S. Murthy, Ryan Keech +1 more |
2021-11-02 |
$26,002,000 |
| 11164974 |
Channel layer formed in an art trench |
Matthew V. Metz, Gilbert Dewey, Nancy Zelick, Harold W. Kennel, Nicholas G. Minutillo +1 more |
2021-11-02 |
$26,002,000 |
| 11164747 |
Group III-V semiconductor devices having asymmetric source and drain structures |
Sean T. Ma, Gilbert Dewey, Harold W. Kennel, Cheng-Ying Huang, Matthew V. Metz +3 more |
2021-11-02 |
$26,002,000 |
| 11152290 |
Wide bandgap group IV subfin to reduce leakage |
Benjamin Chu-Kung, Van H. Le, Matthew V. Metz, Jack T. Kavalieros, Ashish Agrawal +1 more |
2021-10-19 |
$36,352,000 |
| 11152482 |
Antiferroelectric gate dielectric transistors and their methods of fabrication |
Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Prashant Majhi, Jack T. Kavalieros +1 more |
2021-10-19 |
$36,352,000 |
| 11152396 |
Semiconductor device having stacked transistors and multiple threshold voltage control |
Aaron D. Lilak, Rishabh Mehandru, Gilbert Dewey |
2021-10-19 |
$36,352,000 |
| 11145763 |
Vertical switching device with self-aligned contact |
Ravi Pillarisetty, Prashant Majhi, Seung Hoon Sung, Gilbert Dewey, Abhishek A. Sharma +2 more |
2021-10-12 |
$32,982,000 |
| 11145737 |
Selector devices |
Abhishek A. Sharma, Ravi Pillarisetty, Van H. Le, Gilbert Dewey |
2021-10-12 |
$32,982,000 |
| 11139296 |
CMOS circuit with vertically oriented n-type transistor and method of providing same |
Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Ravi Pillarisetty |
2021-10-05 |
$23,463,000 |
| 11107890 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani +2 more |
2021-08-31 |
$22,590,000 |
| 11101376 |
Non-planar transition metal dichalcogenide devices |
Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Gilbert Dewey |
2021-08-24 |
$32,164,000 |
| 11101270 |
Techniques and mechanisms for operation of stacked transistors |
Ravi Pillarisetty, Marko Radosavljevic, Van H. Le, Jack T. Kavalieros |
2021-08-24 |
$32,164,000 |
| 11101377 |
Transistor device with heterogeneous channel structure bodies and method of providing same |
Abhishek A. Sharma, Gilbert Dewey, Van H. Le, Ravi Pillarisetty |
2021-08-24 |
$32,164,000 |
| 11088204 |
Three terminal selectors for memory applications and their methods of fabrication |
Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros |
2021-08-10 |
$36,027,000 |
| 11081483 |
CMOS circuit with a group III-nitride transistor and method of providing same |
Ravi Pillarisetty, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Van H. Le |
2021-08-03 |
$25,424,000 |
| 11075202 |
Bottom fin trim isolation aligned with top gate for stacked device architectures |
Aaron D. Lilak, Gilbert Dewey, Patrick Morrow, Rishabh Mehandru |
2021-07-27 |
$27,337,000 |
| 11075198 |
Stacked transistor architecture having diverse fin geometry |
Aaron D. Lilak, Cheng-Ying Huang, Gilbert Dewey, Rishabh Mehandru |
2021-07-27 |
$27,337,000 |
| 11049773 |
Art trench spacers to enable fin release for non-lattice matched channels |
Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more |
2021-06-29 |
$34,663,000 |
| 11031499 |
Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current |
Van H. Le, Matthew V. Metz, Benjamin Chu-Kung, Ashish Agrawal, Jack T. Kavalieros |
2021-06-08 |
$26,946,000 |
| 11024714 |
Nanowire transistor fabrication with hardmask layers |
Seung Hoon Sung, Seiyon Kim, Kelin J. Kuhn, Jack T. Kavalieros |
2021-06-01 |
$1,176,000 |
