| 11205630 |
Vias in composite IC chip structures |
Adel A. Elsherbini, Patrick Morrow, Johanna M. Swan, Shawna M. Liff, Mauro Kobrinksy +1 more |
2021-12-21 |
$33,282,000 |
| 11195924 |
Broken bandgap contact |
Benjamin Chu-Kung, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Ashish Agrawal +1 more |
2021-12-07 |
$28,128,000 |
| 11189733 |
Thin-film transistors with low contact resistance |
Abhishek A. Sharma, Li Huey Tan, Tristan A. Tronic, Benjamin Chu-Kung, Jack T. Kavalieros +1 more |
2021-11-30 |
$30,212,000 |
| 11189700 |
Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices |
Rafael Rios, Gilbert Dewey, Jack T. Kavalieros, Marko Radosavljevic |
2021-11-30 |
$30,212,000 |
| 11183594 |
Dual gate control for trench shaped thin film transistors |
Abhishek A. Sharma, Gilbert Dewey, Jack T. Kavalieros, Shriram Shivaraman, Benjamin Chu-Kung +2 more |
2021-11-23 |
$33,627,000 |
| 11171240 |
Recessed thin-channel thin-film transistor |
Abhishek A. Sharma, Jack T. Kavalieros, Tahir Ghani, Yih Wang |
2021-11-09 |
$28,241,000 |
| 11171243 |
Transistor structures with a metal oxide contact buffer |
Gilbert Dewey, Abhishek A. Sharma, Jack T. Kavalieros, Shriram Shivaraman, Seung Hoon Sung +4 more |
2021-11-09 |
$28,241,000 |
| 11171233 |
Vertical field effect transistors (VFETs) with self-aligned wordlines |
Ravi Pillarisetty, Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady |
2021-11-09 |
$28,241,000 |
| 11158714 |
Quantum dot devices with trenched substrates |
Ravi Pillarisetty, Jeanette M. Roberts, David J. Michalak, James S. Clarke, Zachary R. Yoscovits |
2021-10-26 |
$21,268,000 |
| 11158731 |
Quantum well stacks for quantum dot devices |
Ravi Pillarisetty, Nicole K. Thomas, Hubert C. George, Jeanette M. Roberts, Payam Amin +5 more |
2021-10-26 |
$21,268,000 |
| 11158711 |
Air gap for thin film transistors |
Abhishek A. Sharma, Li Huey Tan, Tristan A. Tronic, Benjamin Chu-Kung |
2021-10-26 |
$21,268,000 |
| 11152514 |
Multi-layer crystalline back gated thin film transistor |
Abhishek A. Sharma, Gilbert Dewey, Kent Millard, Jack T. Kavalieros, Shriram Shivaraman +6 more |
2021-10-19 |
$36,352,000 |
| 11152290 |
Wide bandgap group IV subfin to reduce leakage |
Benjamin Chu-Kung, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Ashish Agrawal +1 more |
2021-10-19 |
$36,352,000 |
| 11145739 |
Field effect transistors with a gated oxide semiconductor source/drain spacer |
Gilbert Dewey, Rafael Rios, Jack T. Kavalieros |
2021-10-12 |
$32,982,000 |
| 11145737 |
Selector devices |
Abhishek A. Sharma, Ravi Pillarisetty, Gilbert Dewey, Willy Rachmady |
2021-10-12 |
$32,982,000 |
| 11139296 |
CMOS circuit with vertically oriented n-type transistor and method of providing same |
Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady, Ravi Pillarisetty |
2021-10-05 |
$23,463,000 |
| 11138499 |
Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits |
Abhishek A. Sharma, Jack T. Kavalieros, Ian A. Young, Sasikanth Manipatruni, Ram Krishnamurthy +7 more |
2021-10-05 |
$23,463,000 |
| 11101376 |
Non-planar transition metal dichalcogenide devices |
Ravi Pillarisetty, Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady |
2021-08-24 |
$32,164,000 |
| 11101377 |
Transistor device with heterogeneous channel structure bodies and method of providing same |
Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady, Ravi Pillarisetty |
2021-08-24 |
$32,164,000 |
| 11101270 |
Techniques and mechanisms for operation of stacked transistors |
Ravi Pillarisetty, Willy Rachmady, Marko Radosavljevic, Jack T. Kavalieros |
2021-08-24 |
$32,164,000 |
| 11094672 |
Composite IC chips including a chiplet embedded within metallization layers of a host IC chip |
Adel A. Elsherbini, Johanna M. Swan, Shawna M. Liff, Patrick Morrow, Gerald Pasdast |
2021-08-17 |
$29,127,000 |
| 11088204 |
Three terminal selectors for memory applications and their methods of fabrication |
Ravi Pillarisetty, Abhishek A. Sharma, Jack T. Kavalieros, Willy Rachmady |
2021-08-10 |
$36,027,000 |
| 11081483 |
CMOS circuit with a group III-nitride transistor and method of providing same |
Willy Rachmady, Ravi Pillarisetty, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta |
2021-08-03 |
$25,424,000 |
| 11031503 |
Non-planar gate thin film transistor |
Abhishek A. Sharma, Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Yih Wang +1 more |
2021-06-08 |
$26,946,000 |
| 11031499 |
Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current |
Willy Rachmady, Matthew V. Metz, Benjamin Chu-Kung, Ashish Agrawal, Jack T. Kavalieros |
2021-06-08 |
$26,946,000 |
