| 11205717 |
Epitaxially fabricated heterojunction bipolar transistors |
Sansaptak Dasgupta, Han Wui Then, Paul B. Fischer |
2021-12-21 |
$33,282,000 |
| 11195944 |
Gallium nitride (GaN) transistor structures on a substrate |
Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau |
2021-12-07 |
$28,128,000 |
| 11189700 |
Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices |
Van H. Le, Rafael Rios, Gilbert Dewey, Jack T. Kavalieros |
2021-11-30 |
$30,212,000 |
| 11183613 |
Group III-nitride light emitting devices including a polarization junction |
Han Wui Then, Sansaptak Dasgupta |
2021-11-23 |
$33,627,000 |
| 11177376 |
III-N epitaxial device structures on free standing silicon mesas |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-11-16 |
$23,453,000 |
| 11158712 |
Field-effect transistors with buried gates and methods of manufacturing the same |
Han Wui Then, Paul B. Fischer, Sansaptak Dasgupta |
2021-10-26 |
$21,268,000 |
| 11145648 |
Enhancement/depletion device pairs and methods of producing the same |
Sansaptak Dasgupta, Han Wui Then, Paul B. Fischer |
2021-10-12 |
$32,982,000 |
| 11133410 |
Field-effect transistors and methods of manufacturing the same |
Han Wui Then, Sansaptak Dasgupta |
2021-09-28 |
$36,743,000 |
| 11114556 |
Gate stack design for GaN e-mode transistor performance |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung |
2021-09-07 |
$31,495,000 |
| 11107764 |
Group III-V semiconductor fuses and their methods of fabrication |
Han Wui Then, Sansaptak Dasgupta, Tristan A. Tronic, Rajat K. Paul |
2021-08-31 |
$22,590,000 |
| 11101380 |
Group III-nitride integrated front-end circuit |
Han Wui Then, Sansaptak Dasgupta |
2021-08-24 |
$32,164,000 |
| 11101270 |
Techniques and mechanisms for operation of stacked transistors |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Jack T. Kavalieros |
2021-08-24 |
$32,164,000 |
| 11081483 |
CMOS circuit with a group III-nitride transistor and method of providing same |
Willy Rachmady, Ravi Pillarisetty, Han Wui Then, Sansaptak Dasgupta, Van H. Le |
2021-08-03 |
$25,424,000 |
| 11056532 |
Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices |
Han Wui Then, Sansaptak Dasgupta, Paul B. Fischer, Sanaz K. Gardner, Bruce A. Block |
2021-07-06 |
$31,309,000 |
| 11056449 |
Guard ring structures and their methods of fabrication |
Han Wui Then, Sansaptak Dasgupta, Paul B. Fischer |
2021-07-06 |
$31,309,000 |
| 11043627 |
Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devices |
Han Wui Then, Sansaptak Dasgupta, Paul B. Fischer |
2021-06-22 |
$40,504,000 |
| 11031387 |
PN diodes and connected group III-N devices and their methods of fabrication |
Han Wui Then, Sansaptak Dasgupta |
2021-06-08 |
$26,946,000 |
| 11031305 |
Laterally adjacent and diverse group III-N transistors |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung |
2021-06-08 |
$26,946,000 |
| 11005447 |
Microelectronic devices having vertical piezoelectric membranes for integrated RF filters |
Paul B. Fischer, Sansaptak Dasgupta, Han Wui Then |
2021-05-11 |
$38,242,000 |
| 10998260 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances |
Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner |
2021-05-04 |
$37,420,000 |
| 10991817 |
Group III-N transistors including source to channel heterostructure design |
Sansaptak Dasgupta, Han Wui Then |
2021-04-27 |
$44,593,000 |
| 10979012 |
Single-flipped resonator devices with 2DEG bottom electrode |
Sansaptak Dasgupta, Han Wui Then, Bruce A. Block, Paul B. Fischer |
2021-04-13 |
$58,007,000 |
| 10950733 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2021-03-16 |
$65,644,000 |
| 10943836 |
Gallium nitride NMOS on Si (111) co-integrated with a silicon PMOS |
Sansaptak Dasgupta, Valluri Rao, Han Wui Then |
2021-03-09 |
$45,039,000 |
| 10937907 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2021-03-02 |
$34,569,000 |
