Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11031482 | Gate electrode having a capping layer | Gilbert Dewey, Suman Datta, Justin K. Brask, Matthew V. Metz | 2021-06-08 |
| 11031545 | High stability free layer for perpendicular spin torque transfer memory | Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Charles C. Kuo, Daniel G. Ouellette +3 more | 2021-06-08 |
| 10964886 | Spin transfer torque memory devices having heusler magnetic tunnel junctions | Brian S. Doyle, Kaan Oguz, Satyarth Suri, Kevin P. O'Brien, Charles C. Kuo | 2021-03-30 |
| 10950660 | Perpendicular STTM free layer including protective cap | Kaan Oguz, Kevin O’Brien, Brian S. Doyle, Charles C. Kuo | 2021-03-16 |
| 10937907 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Brian S. Doyle, Jack T. Kavalieros +3 more | 2021-03-02 |