| 11189790 |
Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells and the resulting structures |
Kevin Lin, Sarah Atanasov, Robert L. Bristol |
2021-11-30 |
| 11062752 |
Spin orbit torque memory devices and methods of fabrication |
Tofizur Rahman, James Pellegren, Angeline Smith, Christopher J. Wiegand, Noriyuki Sato +5 more |
2021-07-13 |
| 11031545 |
High stability free layer for perpendicular spin torque transfer memory |
Kaan Oguz, Brian S. Doyle, Mark L. Doczy, Charles C. Kuo, Daniel G. Ouellette +3 more |
2021-06-08 |
| 10964886 |
Spin transfer torque memory devices having heusler magnetic tunnel junctions |
Brian S. Doyle, Kaan Oguz, Satyarth Suri, Mark L. Doczy, Charles C. Kuo |
2021-03-30 |
| 10937807 |
Ferroelectric field-effect transistor devices having a top gate and a bottom gate |
Brian S. Doyle, Kaan Oguz, Ricky TSENG |
2021-03-02 |