| 11205707 |
Optimizing gate profile for performance and gate fill |
Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Matthew V. Metz, Gilbert Dewey +2 more |
2021-12-21 |
$33,282,000 |
| 11195924 |
Broken bandgap contact |
Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Matthew V. Metz, Ashish Agrawal +1 more |
2021-12-07 |
$28,128,000 |
| 11189733 |
Thin-film transistors with low contact resistance |
Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic, Benjamin Chu-Kung +1 more |
2021-11-30 |
$30,212,000 |
| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more |
2021-11-30 |
$30,212,000 |
| 11189700 |
Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices |
Van H. Le, Rafael Rios, Gilbert Dewey, Marko Radosavljevic |
2021-11-30 |
$30,212,000 |
| 11183594 |
Dual gate control for trench shaped thin film transistors |
Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Shriram Shivaraman, Benjamin Chu-Kung +2 more |
2021-11-23 |
$33,627,000 |
| 11177255 |
Transistor structures having multiple threshold voltage channel materials |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel +3 more |
2021-11-16 |
$23,453,000 |
| 11171207 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma +3 more |
2021-11-09 |
$28,241,000 |
| 11171243 |
Transistor structures with a metal oxide contact buffer |
Gilbert Dewey, Abhishek A. Sharma, Van H. Le, Shriram Shivaraman, Seung Hoon Sung +4 more |
2021-11-09 |
$28,241,000 |
| 11171240 |
Recessed thin-channel thin-film transistor |
Abhishek A. Sharma, Van H. Le, Tahir Ghani, Yih Wang |
2021-11-09 |
$28,241,000 |
| 11164747 |
Group III-V semiconductor devices having asymmetric source and drain structures |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang +3 more |
2021-11-02 |
$26,002,000 |
| 11152482 |
Antiferroelectric gate dielectric transistors and their methods of fabrication |
Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Prashant Majhi, Willy Rachmady +1 more |
2021-10-19 |
$36,352,000 |
| 11152514 |
Multi-layer crystalline back gated thin film transistor |
Van H. Le, Abhishek A. Sharma, Gilbert Dewey, Kent Millard, Shriram Shivaraman +6 more |
2021-10-19 |
$36,352,000 |
| 11152290 |
Wide bandgap group IV subfin to reduce leakage |
Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Matthew V. Metz, Ashish Agrawal +1 more |
2021-10-19 |
$36,352,000 |
| 11145739 |
Field effect transistors with a gated oxide semiconductor source/drain spacer |
Gilbert Dewey, Rafael Rios, Van H. Le |
2021-10-12 |
$32,982,000 |
| 11145763 |
Vertical switching device with self-aligned contact |
Ravi Pillarisetty, Prashant Majhi, Seung Hoon Sung, Willy Rachmady, Gilbert Dewey +2 more |
2021-10-12 |
$32,982,000 |
| 11138499 |
Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits |
Abhishek A. Sharma, Ian A. Young, Sasikanth Manipatruni, Ram Krishnamurthy, Uygar E. Avci +7 more |
2021-10-05 |
$23,463,000 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2021-09-14 |
$31,644,000 |
| 11121073 |
Through plate interconnect for a vertical MIM capacitor |
Travis W. Lajoie, Abhishek A. Sharma, Juan G. Alzate-Vinasco, Chieh-Jen Ku, Shem Ogadhoh +6 more |
2021-09-14 |
$31,644,000 |
| 11107890 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra +2 more |
2021-08-31 |
$22,590,000 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2021-08-24 |
$32,164,000 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more |
2021-08-24 |
$32,164,000 |
| 11101270 |
Techniques and mechanisms for operation of stacked transistors |
Ravi Pillarisetty, Willy Rachmady, Marko Radosavljevic, Van H. Le |
2021-08-24 |
$32,164,000 |
| 11088204 |
Three terminal selectors for memory applications and their methods of fabrication |
Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Willy Rachmady |
2021-08-10 |
$36,027,000 |
| 11081570 |
Transistors with lattice matched gate structure |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-08-03 |
$25,424,000 |
