Issued Patents 2021
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11171145 | Memory devices based on capacitors with built-in electric field | Sou-Chi Chang, Daniel H. Morris, Seiyon Kim, Ashish Verma Penumatcha, Ian A. Young | 2021-11-09 |
| 11138499 | Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits | Abhishek A. Sharma, Jack T. Kavalieros, Ian A. Young, Sasikanth Manipatruni, Ram Krishnamurthy +7 more | 2021-10-05 |
| 11107908 | Transistors with metal source and drain contacts including a Heusler alloy | Sasikanth Manipatruni, Anurag Chaudhry, Dmitri E. Nikonov, Jasmeet S. Chawla, Christopher J. Wiegand +2 more | 2021-08-31 |
| 11063131 | Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering | Nazila Haratipour, Sou-Chi Chang, Chia-Ching Lin, Jack T. Kavalieros, Ian A. Young | 2021-07-13 |
| 11056593 | Semiconductor devices with metal contacts including crystalline alloys | Sasikanth Manipatruni, Dmitri E. Nikonov, Christopher J. Wiegand, Anurag Chaudhry, Jasmeet S. Chawla +1 more | 2021-07-06 |
| 11004868 | Memory field-effect transistors and methods of manufacturing the same | Seiyon Kim, Joshua M. Howard, Ian A. Young, Daniel H. Morris | 2021-05-11 |
| 10998339 | One transistor and ferroelectric FET based memory cell | Daniel H. Morris, Ian A. Young | 2021-05-04 |
| 10944399 | Multi-level spin logic | Sasikanth Manipatruni, Ian A. Young, Dmitri E. Nikonov, Patrick Morrow, Anurag Chaudhry | 2021-03-09 |
| 10916547 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, David L. Kencke, Ibrahim Ban | 2021-02-09 |
| 10910556 | Magnetic and spin logic devices based on Jahn-Teller materials | Sasikanth Manipatruni, Ian A. Young, Dmitri E. Nikonov, Ravi Pillarisetty | 2021-02-02 |
| 10901486 | Configurable interconnect apparatus and method | Kaushik Vaidyanathan, Daniel H. Morris, Ian A. Young, Tanay Karnik, Huichu Liu | 2021-01-26 |
| 10886265 | Integrated circuit device with a two-dimensional semiconductor material and a dielectric material that includes fixed charges | Ashish Verma Penumatcha, Ian A. Young | 2021-01-05 |
| 10886286 | Vertical memory control circuitry located in interconnect layers | Ashish Verma Penumatcha, Daniel H. Morris, Ian A. Young | 2021-01-05 |